Signal MOSFET. RSQ015P10FRA Datasheet

RSQ015P10FRA MOSFET. Datasheet pdf. Equivalent

Part RSQ015P10FRA
Description Small Signal MOSFET
Feature RSQ015P10FRA   Pch -100V -1.5A Small Signal MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD -100V 47.
Manufacture ROHM
Datasheet
Download RSQ015P10FRA Datasheet

RSQ015P10FRA   Pch -100V -1.5A Small Signal MOSFET    Datas RSQ015P10FRA Datasheet
Recommendation Recommendation Datasheet RSQ015P10FRA Datasheet




RSQ015P10FRA
RSQ015P10FRA
  Pch -100V -1.5A Small Signal MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
-100V
470mΩ
±1.5A
1.25W
lFeatures
1) Low on - resistance
2) Small Surface Mount Package (TSMT6)
3) Pb-free lead plating ; RoHS compliant
4) AEC-Q101 Qualified
lOutline
SOT-457T
SC-95
TSMT6
 
      
lInner circuit
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TR
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
ZN
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-100 V
Continuous drain current
ID ±1.5 A
Pulsed drain current
IDP*1 ±6.0 A
Gate - Source voltage
VGSS
±20 V
Power dissipation
PD*2 1.25 W
PD*3 0.95 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                              
                                                                                        
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© 2018 ROHM Co., Ltd. All rights reserved.
1/11
20180328 - Rev.001    



RSQ015P10FRA
RSQ015P10FRA
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 100
- - 132
Unit
/W
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = -1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = -1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = -100V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = -10V, ID = -1mA
 ΔVGS(th)   ID = -1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
VGS = -10V, ID = -1.5A
RDS(on)*4 VGS = -4.5V, ID = -0.75A
VGS = -4.0V, ID = -0.75A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = -10V, ID = -1.5A
Values
Unit
Min. Typ. Max.
-100 - - V
- -91.3 - mV/
- - -1 μA
- - ±10 μA
-1.0 - -2.5 V
- 3.0 - mV/
- 350 470
- 380 510 mΩ
- 400 540
- 8.2 -
Ω
1.5 - - S
*1 Pw10μs , Duty cycle1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
                                             
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20180328 - Rev.001





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