RSQ025P03FRA

Transistor 4V Drive Pch MOS FET RSQ0255PP0033FRA RSQR0S2Q50P2053PF0R3A AEC-Q101 Qualified zStructure Silicon P-channel MOS FET zFeatures 1) Low On-resistance.(120mΩ at 4.5V) 2) High Power Package.(PD=1.25W) 3) High speed switching. 4) Low voltage drive. (4V) zApplications DC-DC converter zExternal dimensions (Unit : mm) TSMT6 2.9 1.9 0.95 0.95 (6) (5) (4) 1.0MAX 0.85 0.7 1.6 2.8 0.3~0.6 1pin mark (1) (2) (3) 0.4 0~0.1 0.16 Each lead has same dimensions Abbreviated symbol : TP zPackaging specifications Package Type Code Basic ordering unit (pieces) RRSSQQ002255PP0033FRA Taping TR 3000 zEquivalent circuit (6) (5) ∗2 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE zAbsolute maximum ratings (Ta=25°C) Parameter Drain−source voltage Symbol VDSS Limits −30 Unit V Gate−source voltage Drain current Continuous Pulsed VGSS ID IDP ∗1 ±20 ±2.5 ±10 V A A Source current (Body diode) Total power dissipation Continuous Pulsed IS ISP ∗1 PD ∗2 −1 ...