UT6J3

UT6J3 　　-20V Pch+Pch Power MOSFET VDSS RDS(on)(Max.) ID PD -20V 85mΩ ±3A 2W lFeatures 1) Low on - resistance 2) Small Surface Mount Package 3) Pb-free plating ; RoHS compliant 4) Halogen Free lOutline DFN2020-8D HUML2020L8 　 　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 180 Switching Type Tape width (mm) Quantity (pcs) 8 3000 Taping code TCR Marking J03 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS -20 V Continuous drain current ID*1 ±3 A Pulsed drain current IDP*2 ±12 A Gate - Source voltage VGSS 0 to -8 V Avalanche current, single pulse IAS*3 -3 A Avalanche energy, single pulse EAS*3 0.6 mJ Power dissipation PD*4 2 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20191125 - Rev.003 　 　 UT6J3 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - ambient 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　 　 　 　 Symbol RthJA*4 Values Min. Typ. Max. - - 62.5 Unit ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Breakdown voltage temperature coefficient Zero gate voltage drain current ...