Power MOSFET. UT6J3 Datasheet

UT6J3 MOSFET. Datasheet pdf. Equivalent

Part UT6J3
Description Power MOSFET
Feature UT6J3   -20V Pch+Pch Power MOSFET VDSS RDS(on)(Max.) ID PD -20V 85mΩ ±3A 2W lFeatures 1) Low on -.
Manufacture ROHM
Datasheet
Download UT6J3 Datasheet

UT6J3   -20V Pch+Pch Power MOSFET VDSS RDS(on)(Max.) ID PD UT6J3 Datasheet
Recommendation Recommendation Datasheet UT6J3 Datasheet




UT6J3
UT6J3
  -20V Pch+Pch Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
-20V
85mΩ
±3A
2W
lFeatures
1) Low on - resistance
2) Small Surface Mount Package
3) Pb-free plating ; RoHS compliant
4) Halogen Free
lOutline
DFN2020-8D
HUML2020L8
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
180
Switching
Type Tape width (mm)
Quantity (pcs)
8
3000
Taping code
TCR
Marking
J03
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2>
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-20 V
Continuous drain current
ID*1 ±3 A
Pulsed drain current
IDP*2 ±12 A
Gate - Source voltage
VGSS
0 to -8
V
Avalanche current, single pulse
IAS*3 -3 A
Avalanche energy, single pulse
EAS*3
0.6 mJ
Power dissipation
PD*4 2 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
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© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20191125 - Rev.003    



UT6J3
UT6J3
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                       
Symbol
RthJA*4
Values
Min. Typ. Max.
- - 62.5
Unit
/W
lElectrical characteristics (Ta = 25°C) <Tr1 and Tr2>
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Forward Transfer
Admittance
V(BR)DSS VGS = 0V, ID = -1mA
 ΔV(BR)DSS ID = -1mA
   ΔTj    referenced to 25
IDSS VDS = -20V, VGS = 0V
IGSS VGS = -8V, VDS = 0V
VGS(th) VDS = -10V, ID = -1mA
 ΔVGS(th)  ID = -1mA
   ΔTj    referenced to 25
VGS = -4.5V, ID = -3.0A
RDS(on)*5 VGS = -2.5V, ID = -1.5A
VGS = -1.8V, ID = -1.5A
VGS = -1.5V, ID = -0.6A
|Yfs|*5 VDS = -10V, ID = -3A
Values
Min. Typ. Max.
   
Unit
-20 - - V
- -9.3 - mV/
- - -1 μA
- - -10 μA
-0.3 - -1.0 V
- 1.8 - mV/
- 60 85
- 65 95
- 95 155
- 130 260
4- - S
*1 Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L 0.1mH, VDD = -10V, RG = 25Ω, Starting Tj = 25Fig.3-1,3-2
*4 Mounted on a Cu board (40×40×0.8mm)
*5 Pulsed
                                                                                               
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© 2019 ROHM Co., Ltd. All rights reserved.
2/11
20191125 - Rev.003





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