DMOS FET. VP2450 Datasheet

VP2450 FET. Datasheet pdf. Equivalent

Part VP2450
Description P-Channel Enhancement-Mode Vertical DMOS FET
Feature VP2450 P-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low.
Manufacture Microchip
Datasheet
Download VP2450 Datasheet

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VP2450 P-Channel Enhancement-Mode Vertical DMOS FET Featur VP2450 Datasheet
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VP2450
VP2450
P-Channel Enhancement-Mode Vertical DMOS FET
Features
• Free from Secondary Breakdown
• Low Power Drive Requirement
• Ease of Paralleling
• Low CISS and Fast Switching Speeds
• High Input Impedance and High Gain
• Excellent Thermal Stability
• Integral Source-drain Diode
Applications
• Motor Controls
• Converters
• Amplifiers
• Switches
• Power Supply Circuits
• Drivers: Relays, Hammers, Solenoids, Lamps,
Memory, Displays, Bipolar Transistors, etc.
General Description
The VP2450 is a low-threshold, Enhancement-mode
(normally-off) transistor that utilizes a vertical
Double-diffused Metal-Oxide Semiconductor (DMOS)
structure and a well-proven silicon gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors and
the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of
all MOS structures, this device is free from thermal
runaway and thermally induced secondary breakdown.
This Vertical DMOS Field-Effect Transistor (FET) is
ideally suited to a wide range of switching and
amplifying applications where very low threshold
voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching
speeds are desired.
Package Types
TO-92
SOURCE
DRAIN
See Table 3-1 for pin information.
GATE
SOT-89
DRAIN
SOURCE
DRAIN
GATE
2016 Microchip Technology Inc.
DS20005569A-page 1



VP2450
VP2450
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Drain-to-source Voltage......................................................................................................................................... BVDSS
Drain-to-gate Voltage ............................................................................................................................................BVDGS
Gate-to-source Voltage ........................................................................................................................................... ±20V
Operating and Storage Temperatures .................................................................................................. –55°C to +150°C
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: For all specifications, TA = TJ = +25°C unless otherwise noted.
Parameter
Sym. Min. Typ. Max. Unit
Conditions
DC PARAMETER (Note 1 unless otherwise stated)
Drain-to-source Breakdown Voltage
BVDSS –500 —
V VGS = 0V, ID = –250 µA
Gate Threshold Voltage
VGS(th) –1.5 — –3.5
V VGS = VDS, ID = –1 mA
Change in VGS(th) with Temperature
VGS(th)
— –4.8 mV/°C VGS = VDS, ID = –1 mA (Note 2)
Gate Body Leakage Current
IGSS
— — –100 nA VGS = ±20V, VDS = 0V
— — –10 µA VGS = 0V, VDS = Maximum Rating
Zero Gate Voltage Drain Current
IDSS
–1
mA
VDS = 0.8 Maximum Rating,
VGS = 0V, TA = 125°C (Note 2)
On-state Drain Current
ID(ON)
–75
–200
mA
VGS = –4.5V, VDS = –15V
VGS = –10V, VDS = –15V
Static Drain-to-source On-state
Resistance
RDS(ON)
35
30
VGS = –4.5V, ID = –50 mA
VGS = –10V, ID = –100 mA
Change in RDS(ON) with Temperature RDS(ON)
0.75
%/°C
VGS = –10V, ID = –100 mA
(Note 2)
AC PARAMETER (Note 2)
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
DIODE PARAMETER
GFS
CISS
COSS
CRSS
td(ON)
tr
td(OFF)
tf
150 320 — mmho VDS = –15V, ID = –100 mA
— — 190
— — 75
— — 20
pF VGS = 0V, VDS = –25V, f = 1 MHz
— — 10
— — 25
— — 45
ns
VDD = –25V, ID = –200 mA,
RGEN = 25
— — 25
Diode Forward Voltage Drop
VSD
— –1.8
V
VGS = 0V, ISD = –100 mA
(Note 1)
Reverse Recovery Time
trr
— 300 —
ns
VGS = 0V, ISD = –100 mA
(Note 2)
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated.
(Pulse test: 300 µs pulse, 2% duty cycle)
2: Specification is obtained by characterization and is not 100% tested.
DS20005569A-page 2
2016 Microchip Technology Inc.





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