P5806NPG

NIKO-SEM N- & P-Channel Enhancement Mode P5806NPG Field Effect Transistor DIP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) N-Channel 60 58mΩ P-Channel -60 90mΩ ID 4.5A -3.5A D1 D1 D2 D2 #1S1 G1 S2 G2 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissipation Junction & Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM PD Tj, Tstg N-Channel P-Channel UNITS 60 -60 V ±20 ±20 V 4.5 -3.5 4 -3 A 20 -20 2 W 1.28 -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient RθJA Junction-to-Case RθJC 1Pulse width limited by maximum junction temperature. TYPICAL MAXIMUM 62.5 40 UNITS °C / W °C / W ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS...