RJH60D7BDPQ-E0

Preliminary Datasheet RJH60D7BDPQ-E0 600V - 50A - IGBT Application: Inverter R07DS0795EJ0300 Rev.3.00 Jul 20, 2016 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 123 1. Gate 2. Collector G 3. Emitter 4. Collector E Absolute Maximum Ratings Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal ...