P-Channel FET. P1403EV8 Datasheet

P1403EV8 FET. Datasheet pdf. Equivalent

Part P1403EV8
Description P-Channel FET
Feature NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EV8 Field Effect Transistor SOP-8 Halogen-Fr.
Manufacture NIKO-SEM
Datasheet
Download P1403EV8 Datasheet

P1403EV8 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P1403EV8 Datasheet
NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EV8 Fi P1403EV8 Datasheet
Recommendation Recommendation Datasheet P1403EV8 Datasheet




P1403EV8
NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EV8
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30 14mΩ
ID
-12
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
4 :GATE
5,6,7,8 :DRAIN
1,2,3 :SOURCE
100% UIS tested
LIMITS
-30
±25
-12
-10
-65
-39
89
3
2
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
RθJc
25 °C / W
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
40 °C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±25V
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 125 °C
VGS = -4.5V, ID = -9A
VGS = -10V, ID = -12A
-30
-1 -1.5
-3
V
±100 nA
-1
µA
-10
17.8 22
mΩ
11.3 14
REV 1.0
Jan-29-2010
1



P1403EV8
NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EV8
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
Forward Transconductance1
gfs VDS = -10V, ID = -12A
DYNAMIC
28
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = -15V, f = 1MHz
2260
410
Reverse Transfer Capacitance
Crss
204
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 15mV, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -12A
VDS = -15V,
ID -1A, VGS = -10V, RGS = 6Ω
4.8 5.8
38
7
6
12
16
50
100
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2Independent of operating temperature.
IF = -12A, VGS = 0V
-2.5
-1.2
S
pF
Ω
nC
nS
A
V
REMARK: THE PRODUCT MARKED WITH “P1403EV8”, DATE CODE or LOT #
REV 1.0
Jan-29-2010
2





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