IGBT. IXXH110N65C4 Datasheet

IXXH110N65C4 IGBT. Datasheet pdf. Equivalent

Part IXXH110N65C4
Description IGBT
Feature XPTTM 650V IGBT GenX4TM Extreme Light Punch Through IGBT for 20-60 kHz Switching IXXH110N65C4 VCES.
Manufacture IXYS
Datasheet
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XPTTM 650V IGBT GenX4TM Extreme Light Punch Through IGBT for IXXH110N65C4 Datasheet
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IXXH110N65C4
XPTTM 650V IGBT
GenX4TM
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
IXXH110N65C4
VCES = 650V
IC110 = 110A
VCE(sat)  2.35V
tfi(typ) = 30ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
ICM
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 10, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650 V
650 V
±20 V
±30 V
234 A
160 A
110 A
600 A
ICM = 220
@VCE VCES
10
A
μs
880
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 4mA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
110A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
4.0 6.5 V
25 A
2 mA
100 nA
1.98
2.34
2.35 V
V
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Capability
Short Circuit Capability
International Standard Package
Advantages
High Power Density
175°C Rated
Extremely Rugged
Low Gate Drive Requirement
Applications
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2015 IXYS CORPORATION, All Rights Reserved
DS100497B(01/15)



IXXH110N65C4
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 60A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 110A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 55A, VGE = 15V
VCE = 400V, RG = 2
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 55A, VGE = 15V
VCE = 400V, RG = 2
Note 2
RthJC
RthCS
Characteristic Values
Min.
Typ. Max.
24 40
S
3690
240
140
pF
pF
pF
180 nC
32 nC
76 nC
35 ns
46 ns
2.30 mJ
143 ns
30 ns
0.60 1.05 mJ
30 ns
32 ns
2.90 mJ
130 ns
43 ns
0.77 mJ
0.17 °C/W
0.21 °C/W
IXXH110N65C4
TO-247 (IXXH) Outline
123
P
e
Terminals: 1 - Gate
3 - Emitter
2 - Collector
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537





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