Effect Transistor. P1604ETF Datasheet

P1604ETF Transistor. Datasheet pdf. Equivalent

Part P1604ETF
Description P-Channel Field Effect Transistor
Feature NIKO-SEM P-Channel Logic Level Enhancement P1604ETF Mode Field Effect Transistor TO-220F Halogen.
Manufacture NIKO-SEM
Datasheet
Download P1604ETF Datasheet

NIKO-SEM P-Channel Logic Level Enhancement P1604ETF Mode F P1604ETF Datasheet
P1604ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P1604ETF Datasheet
Recommendation Recommendation Datasheet P1604ETF Datasheet




P1604ETF
NIKO-SEM
P-Channel Logic Level Enhancement P1604ETF
Mode Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
16mΩ
ID
-40A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
-40
±20
-40
-25
-120
-40
78
42
17
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJc
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
3
60
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V, TJ = 125 °C
VDS = -5V, VGS = -10V
-40
-1.5 -2.2
-120
V
-3
±100 nA
1
µA
10
A
REV 1.2
May-04-2011
1



P1604ETF
NIKO-SEM
P-Channel Logic Level Enhancement P1604ETF
Mode Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -7V, ID = -15A
VGS = -10V, ID = -25A
VDS = -10V, ID = -25A
DYNAMIC
16 20
mΩ
13 16
38 S
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = -20V, f = 1MHz
2310
438
Reverse Transfer Capacitance
Crss
320
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -25A
VDS = -20V
ID -25A, VGS = -10V, RGS = 6Ω
4.3
45
12
11
15
43
62
50
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = -25A, VGS = 0V
-40
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = -25A, dlF/dt = 100A / µS
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2Independent of operating temperature.
43
31
pF
Ω
nC
nS
A
V
nS
nC
REV 1.2
May-04-2011
2





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