Mode MOSFET. P1604ETF Datasheet

P1604ETF MOSFET. Datasheet pdf. Equivalent

Part P1604ETF
Description P-Channel Enhancement Mode MOSFET
Feature P1604ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 16mΩ @VGS = -1.
Manufacture UNIKC
Datasheet
Download P1604ETF Datasheet

NIKO-SEM P-Channel Logic Level Enhancement P1604ETF Mode F P1604ETF Datasheet
P1604ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P1604ETF Datasheet
Recommendation Recommendation Datasheet P1604ETF Datasheet




P1604ETF
P1604ETF
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
16mΩ @VGS = -10V
ID
-40A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-40
-25
-120
Avalanche Current
IAS -40
Avalanche Energy
L = 0.1mH
EAS
78
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
42
17
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
3
°C / W
60
Ver 1.0
1 2012/4/13



P1604ETF
P1604ETF
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = -250mA
-40
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = -250mA
-1.5 -2.2 -3.0
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±20V
±100
Zero Gate Voltage Drain Current
IDSS
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V , TJ = 125 °C
-1
-10
On-State Drain Current1
ID(ON)
VDS = -5V, VGS = -10V
-120
Drain-Source On-State Resistance1 RDS(ON)
VGS = -7V, ID = -15A
VGS = -10V, ID = -25A
16 20
13 16
Forward Transconductance1 gfs VDS = -10V, ID = -25A
38
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = -20V, f = 1MHz
2310
438
Reverse Transfer Capacitance
Crss
320
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
4.3
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS,
ID = -25A, VGS = -10V
Qgd
45
12
11
Turn-On Delay Time2
td(on)
15
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -20V, ID @ -25A,
VGS = -10V, RGS = 6Ω
43
62
Fall Time2
tf
50
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -25A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -25A, dlF/dt = 100A / mS
43
31
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
-40
-1.3
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/13





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)