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PA503EMG Dataheets PDF



Part Number PA503EMG
Manufacturers NIKO-SEM
Logo NIKO-SEM
Description P-Channel Field Effect Transistor
Datasheet PA503EMG DatasheetPA503EMG Datasheet (PDF)

NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor(Preliminary) PA503EMG SOT-23 Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -30 150m ID -2A D G S 1 :GATE 2 :DRAIN 3 :SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C Power Dissipation TC = 25 °C TC = 70 °C Operating Junction & Storage Temperature Ra.

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NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor(Preliminary) PA503EMG SOT-23 Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -30 150m ID -2A D G S 1 :GATE 2 :DRAIN 3 :SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C Power Dissipation TC = 25 °C TC = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL LIMITS -30 ±20 -2 -1.4 -10 1.25 0.8 -55 to 150 MAXIMUM UNITS V V A W °C UNITS Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% 166 °C / W ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Cur.


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