Effect Transistor. P2503NPG Datasheet

P2503NPG Transistor. Datasheet pdf. Equivalent

Part P2503NPG
Description N- & P-Channel Field Effect Transistor
Feature NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2503NPG DIP-8 Halogen-Free & Le.
Manufacture NIKO-SEM
Datasheet
Download P2503NPG Datasheet

NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Trans P2503NPG Datasheet
Recommendation Recommendation Datasheet P2503NPG Datasheet




P2503NPG
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2503NPG
DIP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
N-Channel 30 25mΩ
P-Channel -30 45mΩ
ID
7A
-5A
D1 D1 D2 D2
#1S1 G1 S2 G2
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 70 °C
L = 0.1mH
TC = 25 °C
TC = 70 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
N-Channel P-Channel UNITS
30 -30 V
±20 ±20 V
7 -5
6 -4
A
20 -20
18 -18
19 mJ
2.5
W
1.6
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
TYPICAL
MAXIMUM
50
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
Gate Threshold Voltage
VGS(th)
STATIC
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
LIMITS
UNIT
MIN TYP MAX
N-Ch 30
P-Ch -30
N-Ch 1 1.5 2.5
P-Ch -1 -1.5 -2.5
V
REV 1.2
1 Feb-09-2010



P2503NPG
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2503NPG
DIP-8
Halogen-Free & Lead-Free
Gate-Body Leakage
Zero Gate Voltage Drain Current
VDS = 0V, VGS = ±20V
N-Ch
IGSS
VDS = 0V, VGS = ±20V
P-Ch
VDS = 24V, VGS = 0V
VDS = -24V, VGS = 0V
N-Ch
P-Ch
IDSS VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch
P-Ch
VDS = -20V, VGS = 0V, TJ = 55 °C
±100
nA
±100
1
-1
µA
10
-10
On-State Drain Current1
ID(ON)
Drain-Source On-State Resistance1 RDS(ON)
Forward Transconductance1
gfs
VDS = 5V, VGS = 10V
VDS =-5V, VGS = -10V
VGS = 4.5V, ID = 6A
VGS = -4.5V, ID = -4A
VGS = 10V, ID = 7A
VGS = -10V, ID = -5A
VDS = 5V, ID = 7A
VDS = -5V, ID = -5A
N-Ch 20
P-Ch -20
A
N-Ch
P-Ch
N-Ch
P-Ch
25 37
58 80
mΩ
18 25
34 45
N-Ch
P-Ch
19
11
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
REV 1.2
DYNAMIC
N-Ch
Ciss
N-Channel
P-Ch
VGS = 0V, VDS = 10V, f = 1MHz N-Ch
Coss
P-Channel
P-Ch
VGS = 0V, VDS = -10V, f = 1MHz N-Ch
Crss
P-Ch
N-Ch
Rg VGS = 0V, VDS = 0V, f = 1MHz
P-Ch
790
690
175
310
65
75
2
6.25
pF
Ω
2 Feb-09-2010





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