Effect Transistor. P1604ES Datasheet

P1604ES Transistor. Datasheet pdf. Equivalent

Part P1604ES
Description P-Channel Field Effect Transistor
Feature NIKO-SEM P-Channel Enhancement Mode Field P1604ES Effect Transistor TO-263 Halogen-Free & Lead-.
Manufacture NIKO-SEM
Datasheet
Download P1604ES Datasheet

NIKO-SEM P-Channel Enhancement Mode Field P1604ES Effect P1604ES Datasheet
Recommendation Recommendation Datasheet P1604ES Datasheet




P1604ES
NIKO-SEM
P-Channel Enhancement Mode Field
P1604ES
Effect Transistor
TO-263
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
16mΩ
ID
-65A
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1,2
TC = 25 °C
TC = 100°C
Avalanche Current
Avalanche Energy
L = 0.1 mH
Power Dissipation
TC = 25 °C
TC = 100°C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3.SOURCE
LIMITS
-40
±20
-65
-42
-120
-46
107
104
41
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
TYPICAL
MAXIMUM
1.2
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID =-250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V, TJ = 70 °C
VDS = -5V, VGS = -10V
VGS = -7V, ID = -15A
VGS = -10V, ID = -25A
VDS = -10V, ID = -25A
LIMITS
MIN TYP MAX UNIT
-40
-1.5 -2.2 -3
V
±100 nA
1
µA
10
-120
A
14 20
mΩ
12 16
29 S
REV 1.0
1 Apr-11-2011



P1604ES
NIKO-SEM
P-Channel Enhancement Mode Field
P1604ES
Effect Transistor
TO-263
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
Reverse Transfer Capacitance
Crss
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -25A
VDS = 0.5V(BR)DSS, ID -25A,
VGS = -10V, RGEN =6Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current
Forward Voltage1
IS
VSD IF = -25A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = -25A, dlF/dt = 100A / µS
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2%.
2Independent of operating temperature.
2229
334
293
4.3
48
9
15
15
43
62
50
pF
Ω
nC
nS
-65 A
-1.3 V
27 nS
16 nC
REV 1.0
2 Apr-11-2011





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