2SB1273. B1273 Datasheet

B1273 2SB1273. Datasheet pdf. Equivalent

Part B1273
Description 2SB1273
Feature SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220 p.
Manufacture SavantIC
Datasheet
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SavantIC Semiconductor Silicon PNP Power Transistors www.Dat B1273 Datasheet
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B1273
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SB1273
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-60
-60
-6
-3
-8
30
150
-55~150
UNIT
V
V
V
A
A
W



B1273
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB1273
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-5mA ,RBE=:
-60
V
V(BR)CBO Collector-base breakdown voltage
IC=-1mA ,IE=0
-60
V
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ,IC=0
-6
V
VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A
-0.4 -1.0
V
VBE Base-emitter on voltage
IC=-0.5A ; VCE=-5V
-0.8 -1.0
V
ICBO Collector cut-off current
VCB=-40V; IE=0
-100 µA
IEBO Emitter cut-off current
VEB=-4V; IC=0
-100 µA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
70 280
hFE-2
DC current gain
IC=-3A ; VCE=-5V
20
COB Output capacitance
IE=0 ; VCB=-10V,f=1MHz
60 pF
fT Transition frequency
IC=-0.5A ; VCE=-5V
100 MHz
hFE-1 Classifications
QRS
70-140 100-200 140-280
2





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