Amplifier Transistors. 2N5550 Datasheet

2N5550 Transistors. Datasheet pdf. Equivalent

Part 2N5550
Description Amplifier Transistors
Feature MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5550/D Amplifier Transistors NPN Si.
Manufacture Motorola
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2N5550
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5550/D
Amplifier Transistors
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
2N5550 2N5551
140 160
160 180
6.0
600
625
5.0
1.5
12
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
2N5550
2N5551
Collector – Base Breakdown Voltage
(IC = 100 µAdc, IE = 0 )
2N5550
2N5551
Emitter – Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
2N5550
2N5551
2N5550
2N5551
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
2N5550
2N5551*
*Motorola Preferred Device
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
140
160
160
180
6.0
ICBO
IEBO
Max Unit
Vdc
Vdc
— Vdc
100 nAdc
50
100 µAdc
50
50 nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1



2N5550
2N5550 2N5551
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
2N5550
2N5551
hFE —
60 —
80 —
(IC = 10 mAdc, VCE = 5.0 Vdc)
2N5550
2N5551
60 250
80 250
(IC = 50 mAdc, VCE = 5.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 k,
f = 1.0 kHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
2N5550
2N5551
Both Types
2N5550
2N5551
Both Types
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
VCE(sat)
VBE(sat)
20
30
fT
Cobo
Cibo
hfe
NF
100
50
Vdc
0.15
0.25
0.20
Vdc
1.0
1.2
1.0
300 MHz
6.0 pF
pF
30
20
200 —
dB
10
8.0
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data





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