DATA SHEET
DARLINGTON POWER TRANSISTOR
2SD2217
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENC...
DATA SHEET
DARLINGTON POWER
TRANSISTOR
2SD2217
NPN SILICON EPITAXIAL
TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2217 is a mold power
transistor developed for lowfrequency power amplifiers and low-speed switching. This
transistor is ideal for direct driving from the IC out to drivers such as pulse motor drivers and relay drivers in OA and FA equipment.
QUALITY GRADES Standard
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current
IC(DC)
Collector current
IC(pulse)*
Base current
IB(DC)
Total power dissipation
PT (Tc = 25°C)
Total power dissipation
PT (Ta = 25°C)
Junction temperature
Tj
...