DATA SHEET
SILICON TRANSISTORS
2SD1616, 2SD1616A
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES Low VCE(sat):
VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) Large PT in small dimension with versatility
PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A Complementary transistor with the 2SB1116 and 1116A
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