N-channel Power MOSFET
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N
N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in D2PAK, TO-2...
Description
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N
N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247
Datasheet — production data
Features
Order codes
VDSS (@Tjmax)
RDS(on) max.
ID PTOT
STB18NM60N STF18NM60N STP18NM60N STW18NM60N
650 V
110 W 30 W < 0.285 Ω 13 A 110
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
TAB
3 1
D²PAK
TAB
3 2 1
TO-220
3 2 1
TO-220FP
3 2 1
TO-247
Applications
■ Switching applications
Figure 1. Internal schematic diagram
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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Table 1. Device summary Order codes STB18NM60N STF18NM60N STP18NM60N STW18NM60N
Marking 18NM60N 18NM60N 18NM60N 18NM60N
Package D²PAK
TO-220FP TO-220 TO-247
!-V
Packaging Tape and reel
Tube Tube Tube
October 2012
This is information on a product in full production.
Doc ID 15868 Rev 4
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Contents
Contents
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . ....
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