POWER MOSFET. 7NM80 Datasheet

7NM80 MOSFET. Datasheet pdf. Equivalent


Part 7NM80
Description N-CHANNEL POWER MOSFET
Feature UNISONIC TECHNOLOGIES CO., LTD 7NM80 Preliminary 7.0A, 800V N-CHANNEL SUPER-JUNCTION MOSFET  DE.
Manufacture Unisonic Technologies
Datasheet
Download 7NM80 Datasheet


UNISONIC TECHNOLOGIES CO., LTD 7NM80 Preliminary 7.0A, 80 7NM80 Datasheet
Recommendation Recommendation Datasheet 7NM80 Datasheet




7NM80
UNISONIC TECHNOLOGIES CO., LTD
7NM80
Preliminary
7.0A, 800V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 7NM80 is a Super Junction MOSFET Structure and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used at
DC-DC, AC-DC converters for power applications.
FEATURES
* RDS(ON) < 0.94@ VGS = 10V, ID = 3.5A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
7NM80L-TA3-T
7NM80G-TA3-T
TO-220
7NM80L-TF1-T
7NM80G-TF1-T
TO-220F1
7NM80L-TN3-T
7NM80G-TN3-T
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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7NM80
7NM80
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
800
V
Gate-Source Voltage
Drain Current
Avalanche Energy
Continuous
Pulsed (Note 2)
Single Pulsed (Note 3)
VGSS
ID
IDM
EAS
±30
7.0
28
420
V
A
A
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt 6.2 V/ns
TO-220
142 W
Power Dissipation
TO-220F1
PD
52
W
TO-252
83 W
Junction Temperature
Storage Temperature Range
TJ
TSTG
+150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=159mH, IAS=2.3A, VDD=50V, RG=25, Starting TJ = 25°C.
4. ISD 7.0A, di/dt 200A/μs, VDD V(BR)DSS, TJ = 25°C.
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-252
TO-220
Junction to Case
TO-220F1
TO-252
SYMBOL
θJA
θJC
RATING
62.5
110
0.88
2.4
1.5
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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