CMOS SRAM. UT61256C Datasheet

UT61256C SRAM. Datasheet pdf. Equivalent


Part UT61256C
Description 32K x 8 BIT HIGH SPEED CMOS SRAM
Feature  UTRON Rev. 1.2 FEATURES Fast access time : 8/10/12/15 ns (max.) Low operating power consumption : .
Manufacture UTRON
Datasheet
Download UT61256C Datasheet


 UTRON Rev. 1.2 FEATURES Fast access time : 8/10/12/15 ns ( UT61256C Datasheet
Recommendation Recommendation Datasheet UT61256C Datasheet




UT61256C
UTRON
Rev. 1.2
FEATURES
Fast access time : 8/10/12/15 ns (max.)
Low operating power consumption :
80 mA (typical)
Single 5V power supply
All inputs and outputs TTL compatible
Fully static operation
Three state outputs
Package : 28-pin 300 mil SOJ
28-pin 8mm×13.4mm STSOP
FUNCTIONAL BLOCK DIAGRAM
A0-A14
Vcc
Vss
DECODER
32K × 8
MEMORY
ARRAY
I/O1-I/O8
I/O DATA
CIRCUIT
COLUMN I/O
CE
OE
CONTROL
CIRCUIT
WE
PIN DESCRIPTION
SYMBOL
A0 - A14
I/O1 - I/O8
CE
WE
OE
VCC
VSS
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Write Enable Input
Output Enable Input
Power Supply
Ground
UT61256C
32K X 8 BIT HIGH SPEED CMOS SRAM
The UT61256C is a 262,144-bit high-speed
CMOS static random access memory organized
as 32,768 words by 8 bits. It is fabricated using
high performance, high reliability CMOS
technology.
The UT61256C is designed for high-speed
system applications. It is particularly suited for
use in high-density high-speed system
applications.
The UT61256C operates from a single 5V power
supply and all inputs and outputs are fully TTL
compatible.
PIN CONFIGURATION
A14 1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
I/O1 11
I/O2 12
I/O3 13
Vss 14
28 Vcc
27 WE
26 A13
25 A8
24 A9
23 A11
22 OE
21 A10
20 CE
19 I/O8
18 I/O7
17 I/O6
16 I/O5
15 I/O4
SOJ
OE 1
A11 2
28
27
A9 3
26
A8 4
25
A13 5
WE 6
24
23
Vcc 7
22
A14 8 UT61256C 21
A12 9
A7 10
A6 11
20
19
18
A5 12
17
A4 13
16
A3 14
15
A10
CE
I/O8
I/O7
I/O6
I/O5
I/O4
Vss
I/O3
I/O2
I/O1
A0
A1
A2
STSOP
GENERAL DESCRIPTION
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
1
P80031



UT61256C
UTRON
Rev. 1.2
ABSOLUTE MAXIMUM RATINGS*
UT61256C
32K X 8 BIT HIGH SPEED CMOS SRAM
PARAMETER
Terminal Voltage with Respect to Vss
Operating Temperature
SYMBOL
VTERM
TA
RATING
-0.5 to +6.5
0 to +70
UNIT
V
Storage Temperature
TSTG
-65 to +150
Power Dissipation
DC Output Current
Soldering Temperature (under 10 sec)
PD
IOUT
Tsolder
1
50
260
W
mA
*Stress greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may
affect device reliability.
TRUTH TABLE
MODE
CE
Standby
H
Output Disable
L
Read
L
Write
L
Note: H = VIH, L=VIL, X = Don't care.
OE
X
H
L
X
WE
X
H
H
L
I/O OPERATION
High - Z
High - Z
DOUT
DIN
SUPPLY CURRENT
ISB,ISB1
ICC
ICC
ICC
DC ELECTRICAL CHARACTERISTICS (VCC = 5V± 10%, TA = 0to 70)
PARAMETER
SYMBOL TEST CONDITION
Input High Voltage
VIH
Input Low Voltage
VIL
Input Leakage Current
ILI VSS VIN VCC
Output Leakage Current
ILO
VSS VI/O VCC
CE =VIH or OE =VIH or WE =VIL
Output High Voltage
Output Low Voltage
Operating Power
Supply Current
VOH IOH = - 4mA
VOL IOL = 8mA
ICC
Cycle time=Min.
CE = VIL , II/O = 0mA
-8
- 10
- 12
- 15
Standby Current (TTL)
ISB CE = VIH
Standby Current (CMOS) ISB1 CE VCC-0.2V
MIN.
2.2
- 0.5
-1
MAX.
VCC+0.5
0.8
1
UNIT
V
V
µA
- 1 1 µA
2.4 -
V
- 0.4 V
- 190 mA
- 180 mA
- 160 mA
- 140 mA
- 30 mA
- 5 mA
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
2
P80031







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