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MTW20N50E Dataheets PDF



Part Number MTW20N50E
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet MTW20N50E DatasheetMTW20N50E Datasheet (PDF)

MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications i.

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MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Robust High Voltage Termination • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage VDSS 500 Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 500 Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 µs) ID 20 ID 14.1 IDM 60 Total Power Dissipation Derate above 25°C PD 250 2.0 Operating and Storage Temperature Range TJ, Tstg −55 to 150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 10 mH, RG = 25 Ω) Thermal Resistance − Junction to Case Thermal Resistance − Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds EAS RθJC RθJA TL 2000 0.50 40 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ °C/W °C http://onsemi.com 20 AMPERES 500 VOLTS RDS(on) = 240 mΩ N−Channel D G 1 23 S 4 TO−247AE CASE 340K Style 1 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain MTW20N50E LLYWW 1 Gate 3 Source 2 Drain LL = Location Code Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping MTW20N50E TO−247 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2004 1 August, 2004 − Rev. XXX Publication Order Number: MTW20N50E/D MTW20N50E ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 500 Vdc, VGS = 0 Vdc) (VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 10 Adc) Drain−Source On−Voltage (VGS = 10 Vdc) (ID = 20 Adc) (ID = 10 Adc, TJ = 125°C) Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) SWITCHING CHARACTERISTICS (Note 2.) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time (VDD = 250 Vdc, ID = 20 Adc, VGS = 10 Vdc, RG = 9.1 Ω) Gate Charge (See Figure 8) (VDS = 400 Vdc, ID = 20 Adc, VGS = 10 Vdc) SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (Note 1.) (IS = 20 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) VDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf QT Q1 Q2 Q3 VSD Reverse Recovery Time (See Figure 14) Reverse Recovery Stored Charge (IS = 20 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) trr ta tb QRR INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance LD (Measured from the drain lead 0.25″ from package to center of die) Internal Source Inductance LS (Measured from the source lead 0.25″ from package to source bond pad) 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. Min Typ Max Unit 500 − − 583 − Vdc − mV/°C µAdc − − 10 − − 100 − − 100 nAdc 2.0 3.0 4.0 Vdc − 7.0 − mV/°C − 0.20 0.24 Ohm Vdc − 5.75 6.0 − − 6.0 11 16.2 − mhos − 3880 6950 pF − 452 920 − 96 140 − 29 55 ns − 90 165 − 97 190 − 84 170 − 100 132 nC − 20 − − 44 − − 36 − Vdc − 0.916 1.1 − 0.81 − − 431 − ns − 272 − − 159 − − 6.67 − µC − 5.0 − nH − 13 − nH http://onsemi.com 2 I D , DRAIN CURRENT (AMPS) MTW20N50E TYPICAL ELECTRICAL CHARACTERIS.


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