Document
MTW20N50E
Preferred Device
Power MOSFET 20 Amps, 500 Volts
N−Channel TO−247
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
VDSS
500
Drain−Gate Voltage (RGS = 1.0 MΩ)
VDGR
500
Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms)
VGS VGSM
± 20 ± 40
Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 µs)
ID
20
ID
14.1
IDM
60
Total Power Dissipation Derate above 25°C
PD
250
2.0
Operating and Storage Temperature Range TJ, Tstg −55 to 150
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 10 mH, RG = 25 Ω)
Thermal Resistance − Junction to Case Thermal Resistance − Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
EAS
RθJC RθJA
TL
2000
0.50 40 260
Unit Vdc Vdc
Vdc Vpk Adc Apk Watts W/°C °C
mJ
°C/W
°C
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20 AMPERES 500 VOLTS
RDS(on) = 240 mΩ
N−Channel D
G
1 23
S
4
TO−247AE CASE 340K
Style 1
MARKING DIAGRAM & PIN ASSIGNMENT
4 Drain
MTW20N50E LLYWW
1 Gate
3 Source
2 Drain
LL
= Location Code
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTW20N50E
TO−247
30 Units/Rail
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
August, 2004 − Rev. XXX
Publication Order Number: MTW20N50E/D
MTW20N50E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current (VDS = 500 Vdc, VGS = 0 Vdc) (VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative)
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 10 Adc)
Drain−Source On−Voltage (VGS = 10 Vdc) (ID = 20 Adc) (ID = 10 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2.)
Turn−On Delay Time
Rise Time Turn−Off Delay Time Fall Time
(VDD = 250 Vdc, ID = 20 Adc, VGS = 10 Vdc, RG = 9.1 Ω)
Gate Charge (See Figure 8)
(VDS = 400 Vdc, ID = 20 Adc, VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1.)
(IS = 20 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on) VDS(on)
gFS
Ciss Coss Crss
td(on) tr
td(off) tf QT Q1 Q2 Q3
VSD
Reverse Recovery Time (See Figure 14)
Reverse Recovery Stored Charge
(IS = 20 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs)
trr ta tb QRR
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
LD
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature.
Min
Typ
Max
Unit
500
−
−
583
−
Vdc
−
mV/°C
µAdc
−
−
10
−
−
100
−
−
100
nAdc
2.0
3.0
4.0
Vdc
−
7.0
−
mV/°C
−
0.20
0.24
Ohm
Vdc
−
5.75
6.0
−
−
6.0
11
16.2
−
mhos
−
3880 6950
pF
−
452
920
−
96
140
−
29
55
ns
−
90
165
−
97
190
−
84
170
−
100
132
nC
−
20
−
−
44
−
−
36
−
Vdc
−
0.916
1.1
−
0.81
−
−
431
−
ns
−
272
−
−
159
−
−
6.67
−
µC
−
5.0
−
nH
−
13
−
nH
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I D , DRAIN CURRENT (AMPS)
MTW20N50E
TYPICAL ELECTRICAL CHARACTERIS.