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ET-20N50 Dataheets PDF



Part Number ET-20N50
Manufacturers ESTEK
Logo ESTEK
Description N-Channel MOSFET
Datasheet ET-20N50 DatasheetET-20N50 Datasheet (PDF)

Features ■ RDS(on) (Max 0.26 Ω )@VGS=10V ■ Gate Charge (Typical 90nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) ET-20N50 N-Channel MOSFET Symbol 1. Gate{ { 2. Drain ● ◀▲ ● ● { 3. Source General Description This Power MOSFET is manufactured advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These device.

  ET-20N50   ET-20N50


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Features ■ RDS(on) (Max 0.26 Ω )@VGS=10V ■ Gate Charge (Typical 90nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) ET-20N50 N-Channel MOSFET Symbol 1. Gate{ { 2. Drain ● ◀▲ ● ● { 3. Source General Description This Power MOSFET is manufactured advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TO-247 G DS Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recov.


20N50 ET-20N50 20N50


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