N-Channel MOSFET. ET-20N50 Datasheet

ET-20N50 MOSFET. Datasheet pdf. Equivalent


Part ET-20N50
Description N-Channel MOSFET
Feature Features ■ RDS(on) (Max 0.26 Ω )@VGS=10V ■ Gate Charge (Typical 90nC) ■ Improved dv/dt Capability, H.
Manufacture ESTEK
Datasheet
Download ET-20N50 Datasheet


Features ■ RDS(on) (Max 0.26 Ω )@VGS=10V ■ Gate Charge (Typi ET-20N50 Datasheet
Recommendation Recommendation Datasheet ET-20N50 Datasheet




ET-20N50
Features
RDS(on) (Max 0.26 )@VGS=10V
Gate Charge (Typical 90nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
ET-20N50
N-Channel MOSFET
Symbol
1. Gate{
{ 2. Drain
◀▲
{ 3. Source
General Description
This Power MOSFET is manufactured advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
TO-247
G DS
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
500
20
13
80
±30
1110
25.0
4.5
250
2.00
- 55 ~ 150
300
Value
Typ.
-
0.24
-
Max.
0.50
-
40
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
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ET-20N50
ET-20N50
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
gfs Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
Test Conditions
Min
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
500
-
-
-
-
-
VDS = VGS, ID = 250uA
VGS =10 V, ID = 10A
VDS =50V , ID =10.0A
2.0
-
-
VGS =0 V, VDS =25V, f = 1MHz
-
-
-
VDD =250V, ID =20.0A, RG =25
(Note 4, 5)
VDS =400V, VGS =10V, ID =20.0A
(Note 4, 5)
-
-
-
-
-
-
-
Typ Max Units
--V
0.6 - V/°C
- 10 uA
- 100 uA
- 100 nA
-
-100
nA
- 4.0
0.21 0.26
15 -
V
S
3350
490
50
-
-
-
pF
60 -
210 -
170 -
130 -
90 -
20 -
42 -
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Q
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS =20.0A, VGS =0V
IS=20.0A, VGS=0V, dIF/dt=100A/us
Min.
-
-
-
-
-
Typ.
-
-
-
370
380
Max.
20
80
1.4
-
-
Unit.
A
V
ns
nC
NOTrEr S
1. Repeativity rating : pulse width limited by junction temperature
2. L = 5.0mH, IAS =20.0A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 20.0A, di/dt 200A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
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