N-Channel MOSFETS
N-Channel MOSFETS
DESCRIPTION
The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density...
Description
N-Channel MOSFETS
DESCRIPTION
The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
20N50
V DSS
RDS(ON )
ID
500V 0.26Ω 20A
TO-3P
Features
20.0A,500V,RDS(ON)=0.26 Ω@VGS=10V Low gate charge (typical 70Nc) Fast switching 100% avalanche tested Improved dv/dt capability
Ordering Information
PART NUMBER PACKAGE BRAND
20N50
TO-3P
0GFD
www.goford.cn TEL:0755-86350980 FAX:0755-86350963
Absolute Maximum Ratings (TC=25℃, unless otherwise noted)
20N50
Symbol
Parameter
20N50
Units
VDSS ID IDM
PD
VGS EAS dv/dt TJ and TSTG
Drain-to-Source Voltage Continuous Drain Current Pulsed Drain...
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