N-Channel MOSFETS. 20N50 Datasheet

20N50 MOSFETS. Datasheet pdf. Equivalent


Part 20N50
Description N-Channel MOSFETS
Feature N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technolog.
Manufacture OGFD
Datasheet
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20N50
N-Channel MOSFETS
DESCRIPTION
The OGFD 20N50 is produced using advanced
planar stripe DMOS technology. This high density
process is especially tailored to minimize on-state
resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery
powered circuits where high-side switching and low
in-line power loss are needed in a very small outline
surface mount package.
20N50
V DSS
RDS(ON )
ID
500V 0.26Ω 20A
TO-3P
Features
• 20.0A,500V,RDS(ON)=0.26 Ω@VGS=10V
• Low gate charge (typical 70Nc)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Ordering Information
PART NUMBER PACKAGE BRAND
20N50
TO-3P
0GFD
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20N50
Absolute Maximum Ratings (TC=25, unless otherwise noted)
20N50
Symbol
Parameter
20N50
Units
VDSS
ID
IDM
PD
VGS
EAS
dv/dt
TJ and TSTG
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current@VG=10V
Power Dissipation
Derating Factor above 25
Gate-to-Source Voltage
Single PulseAvalanche Energy (L=1mH, IAS=40A)C
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range
500
20
80
280
2.30
± 30
1110
4.5
-55 to 150
V
A
W
W/
V
mJ
V/ns
Thermal Resistance
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
RθJC
RθCS
Junction-to-Case
Case-to-Sink Typ
-- -- 0.44
Water cooled heatsink, PD adjusted for
-- 0.24 --
a peak junction temperature of +175.
/W
RθJA
Junction-to-Ambient -- -- 40
1 cubic foot chamber, free air.
OFF Characteristics TJ=25unless otherwise specified
Symbol
BVDSS
I GSS
I D SS
Parameter
Min.
Drain-to-Source
Voltage
Breakdown
500
Gate-to-Source Forward Leakage --
Zero Gate Voltage Drain Current
--
Typ.
--
--
--
Max. Units Test Conditions
-- V VGS=0, ID=250uA
100 nA VDS=0V, VGS=30V
1 uA VDS=500V, VGS=0V
ON Characteristics TJ=25unless otherwise specified
Symbol
RD S(ON)
Parameter
Static
On-Resistance
Min.
Drain-to-Source
--
Typ.
0.21
Max
0.26
Uni
Test Conditions
ts
Ω VGS=10V,ID=10A
VGS(TH)
Gate Threshold Voltage, Figure 12. 2.0
--
4.0 V VDS=10V, ID=250uA
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