DatasheetsPDF.com
TC58NVG2S0HBAI6
4G-BIT (512M x 8 BIT) CMOS NAND E2PROM
Description
TC58NVG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG2S0HBAI6 is a single 3.3V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks. The device has two 4352-byte static re...
Toshiba
Download TC58NVG2S0HBAI6 Datasheet
Similar Datasheet
TC58NVG2S0HBAI4
4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
- Toshiba
TC58NVG2S0HBAI6
4G-BIT (512M x 8 BIT) CMOS NAND E2PROM
- Toshiba
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
