Power MOSFET. 20N50 Datasheet

20N50 MOSFET. Datasheet pdf. Equivalent


Part 20N50
Description N-Channel Power MOSFET
Feature SEMICONDUCTOR 20N50 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (20A, 500Volts.
Manufacture nELL
Datasheet
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20N50
SEMICONDUCTOR
20N50 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(20A, 500Volts)
DESCRIPTION
The Nell 20N50 is a three-terminal silicon
device with current conduction capability
of 20A, fast switching speed, low on-state
resistance, breakdown voltage rating of 500V,
and max. threshold voltage of 5 volts.
They are designed for use in applications
such as switched mode power supplies, DC
to DC converters, motor control circuits, UPS
and general purpose switching applications.
D
G
D
S
TO-3PB
(20N50B)
D (Drain)
FEATURES
RDS(ON) = 0.23Ω@VGS = 10V
Ultra low gate charge(60nC max.)
Low reverse transfer capacitance
(CRSS = 27pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
20
500
0.23 @ VGS = 10V
60
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
IAR=20A, RGS=50Ω, VGS=10V
dv/dt
Peak diode recovery dv/dt(Note 2)
Total power dissipation
PD (Derating factor above 25°C)
TC=25°C
TJ
TSTG
TL
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
VALUE
500
500
±30
20
12.4
80
20
25
4.6
280 (2.3)
UNIT
V
A
mJ
V /ns
W(W/°C)
-55 to 150
-55 to 150
ºC
300
10 (1.1)
lbf.in (N.m)
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.ISD ≤ 20A, di/dt ≤ 200A/µs, VDD V(BR)DSS, starting TJ=25°C.
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Page 1 of 7



20N50
SEMICONDUCTOR
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(c-s)
Rth(j-a)
Thermal resistance, case to heatsink
Thermal resistance, junction to ambient
20N50 Series RRooHHSS
Nell High Power Products
TO-3P(B)
TO-3P(B)
Min.
Typ.
0.5
Max.
0.44
40
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
V(BR)DSS
▲ ▲V(BR)DSS/ TJ
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
ID = 250µA, VGS = 0V
ID = 250µA, referenced to 25°C
500
IDSS
Drain to source leakage current
VDS=500V, VGS=0V TC = 25°C
VDS=400V, VGS=0V TC=150°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
RDS(ON)
Static drain to source on-state resistance ID = 10A, VGS = 10V
VGS(TH)
gFS
Gate threshold voltage
Forward transconductance
VGS=VDS, ID=250μA
VDS=40V, ID=10A
3.0
CISS
Input capacitance
COSS
Output capacitance
VDS = 25V, VGS = 0V, f =1MHz
CRSS
Reverse transfer capacitance
td(ON)
Turn-on delay time
tr
td(OFF)
Rise time
Turn-off delay time
VDD = 250V, VGS = 10V, ID = 20A
RGS = 25Ω(Note 1, 2)
tf Fall time
QG
QGS
QGD
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
VDD = 400V, VGS = 10V, ID = 20A
(Note 1, 2)
EAS
Single pulse avalanche energy(Note 3)
IAS= 20A, L=5.0mH
Typ.
0.5
0.20
24.6
2400
355
27
95
375
100
105
46
15
22
Max.
25
250
100
-100
0.23
5.0
3120
465
200
760
210
220
60
1110
UNIT
V
V/ºC
μA
nA
Ω
V
S
pF
ns
nC
mJ
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD Diode forward voltage
ISD = 20A, VGS = 0V
1.4 V
Is (IsD)
Continuous source to drain current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
20
ISM Pulsed source current
G
(Gate)
S (Source)
trr Reverse recovery time
Qrr Reverse recovery charge
ISD = 20A, VGS = 0V,
dIF/dt = 100A/µs
Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
3. IAS=20A, VDD=50V, L=5.0mH, RGS= 25Ω, starting TJ=25°C.
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Page 2 of 7
A
80
500 ns
7.2 μC







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