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TC518129AFWI-10

Toshiba

SILICON GATE CMOS PSEUDO STATIC RAM


Description
TOSHIBA 1l:518129~-10 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129AFWI is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129AFWI utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The T...



Toshiba

TC518129AFWI-10

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