SILICON GATE CMOS STATIC RAM
TOSHIBA
11:551664]-15/20/25
SILICON GATE CMOS
65,536 WORD x 16 BIT CMOS STATIC RAM
Description
The TCEib 166L1-) is ...
Description
TOSHIBA
11:551664]-15/20/25
SILICON GATE CMOS
65,536 WORD x 16 BIT CMOS STATIC RAM
Description
The TCEib 166L1-) is Gt 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and opemtfyj from a ~;ingle 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.
The I Uh1664,J features low power dissipation when the device is deselected using chip enable (CE), and has an output Hf1alJle Input (OE:.1 fOt' fast memory access. Byte access is supported by upper and lower byte controls.
The TCS~)1664J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are 11 L compatible.
The TC5E)1664,j is available in a 400mil width, 44-pin SOJ suitable for high density surface assembly.
Features
Fast access time
TC551 Gfi4J 1Ei 15ns (max.) - TCb51f3(l!kj -20 20ns (max.)
TCb~) 1He'LJ 2b 25ns (max.)
,------- L.ow power dlssipalion
- ---~"-----
-
1~~~~I~~...
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