2SA1012
PNP Silicon Epitaxial Planar Transistor
for high current switching applications.
The transistor is subdivided in...
2SA1012
PNP Silicon Epitaxial Planar
Transistor
for high current switching applications.
The
transistor is subdivided into two group, O and Y, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Tamb = 25 OC Parameter
DC Current Gain at -VCE = 1 V, -IC = 1 A
at -VCE = 1 V, -IC = 3 A Collector Emitter Breakdown Voltage at -IC = 10 mA Collector Cutoff Current
at -VCB = 50 V Emitter Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 3 A, -IB = 0.15 A Base Emitter Saturation Voltage at -IC = 3 A, -IB = 0.15 A Transition Frequency at -VCE = 4 V, -IC = 1 A Collector Output Capacitance at -VCB = 10 V, f = 1 MHz
TO-220 Plastic Package
Symbol -VCBO -VCEO -VEBO
-IC Ptot Tj Ts
Value 60 50 5 5 25 150
-55 to +150
Unit V V V A W OC OC
Symbol Min.
O hFE Y hFE
hFE -V(BR)CE...
