2SA1666U
PNP Silicon Epitaxial Planar Transistor
for high current application
Absolute Maximum Ratings (Ta = 25℃) Param...
2SA1666U
PNP Silicon Epitaxial Planar
Transistor
for high current application
Absolute Maximum Ratings (Ta = 25℃) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current
Total Power Dissipation
Junction Temperature Storage Temperature Range
1) When mounted on a 250 mm2 x 0.8 t ceramic substrate.
Symbol -VCBO -VCEO -VEBO
-IC -IB
Ptot
Tj Tstg
Value
50
50
5
2
0.4 0.5 1 1) 150
- 55 to + 150
Unit V V V A A
W
℃ ℃
Characteristics at Ta = 25℃
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at -VCE = 2 V, -IC = 500 mA at -VCE = 2 V, -IC = 1.5 A
Current Gain Group O hFE
70
- 140 -
Y hFE
120
-
240
-
hFE 40
-
-
-
Collector Base Cutoff Current at -VCB = 50 V
-ICBO
-
- 100 nA
Emitter Base Cutoff Current at -VEB = 5 V
-IEBO
-
- 100 nA
Collector Emitter Breakdown Voltage at -IC = 10 mA
-V(BR)CEO
50
-
-
V
Collector Emitter Saturation Voltage at -IC = 1 A, -IB = 50 mA
-VCE(sat)
-
- 0.5 V
Base Emit...
