2SA1900U

2SA1900U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pw = 20 ms) Collector Power Dissipation Junction Temperature Storage Temperature Range 1) When mounted on a 40 x 40 x 0.7 mm ceramic board. Characteristics at Ta = 25℃ Parameter DC Current Gain at -VCE = 3 V, -IC = 500 mA Collector Base Cutoff Current at -VCB = 40 V Emitter Base Cutoff Current at -VEB = 4 V Collector Base Breakdown Voltage at -IC = 50 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 50 µA Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Transition Frequency at -VCE = 5 V, IE = 50 mA, f = 100 MHz Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Symbol -VCBO -VCEO -VEBO -IC -ICP PC Tj Tstg Value 60 50 5 1 2 0.5 2 1) 150 - 55 to + 150 Unit V V V A A W ℃ ℃ Symbol hFE Mi...