STGW30NC120HD. GW30NC120HD Datasheet

GW30NC120HD STGW30NC120HD. Datasheet pdf. Equivalent


STMicroelectronics GW30NC120HD
STGW30NC120HD
N-channel 1200V - 30A - TO-247
very fast PowerMESH™ IGBT
Features
Type
VCES
STGW30NC120HD 1200V
VCE(sat)
@25°C
< 2.75V
IC
@100°C
30A
Low on-losses
Low on-voltage drop (Vcesat)
High current capability
High input impedance (voltage driven)
Low gate charge
Ideal for soft switching application
Application
Induction heating
Description
Using the latest high voltage technology based on
its patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, with
outstanding performances. The suffix “H”
identifies a family optimized for high frequency
application in order to achieve very high switching
performances (reduced tfall) maintaining a low
voltage drop.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STGW30NC120HD
GW30NC120HD
Package
TO-247
Packaging
Tube
October 2007
Rev 9
1/13
www.st.com
13


GW30NC120HD Datasheet
Recommendation GW30NC120HD Datasheet
Part GW30NC120HD
Description STGW30NC120HD
Feature GW30NC120HD; STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH™ IGBT Features Type VCES STGW30.
Manufacture STMicroelectronics
Datasheet
Download GW30NC120HD Datasheet




STMicroelectronics GW30NC120HD
Contents
Contents
STGW30NC120HD
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STMicroelectronics GW30NC120HD
STGW30NC120HD
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VCES Collector-emitter voltage (VGS = 0)
IC (1) Collector current (continuous) at 25°C
IC (1) Collector current (continuous) at 100°C
ICL (2) Collector current (pulsed)
VGE Gate-emitter voltage
PTOT Total dissipation at TC = 25°C
If Diode RMS forward current at TC = 25°C
Tj Operating junction temperature
1. Calculated according to the iterative formula:
IC(TC)
=
----------------------------------T----J---M------A----X------–----T----C-------------------------------------
RTHJ C × VCESAT(MAX)(TC, IC)
2. Vclamp=80% of BVces, Tj=150°C, RG=10, VGE=15V
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-ambient (diode)
Rthj-amb Thermal resistance junction-ambient (IGBT)
Electrical ratings
Value
1200
60
30
135
±25
220
30
–55 to 150
Unit
V
A
A
A
V
W
A
°C
Value
0.57
1.6
30
Unit
°C/W
°C/W
°C/W
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