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STGW30NC120HD. GW30NC120HD Datasheet |
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STGW30NC120HD
N-channel 1200V - 30A - TO-247
very fast PowerMESH™ IGBT
Features
Type
VCES
STGW30NC120HD 1200V
VCE(sat)
@25°C
< 2.75V
IC
@100°C
30A
■ Low on-losses
■ Low on-voltage drop (Vcesat)
■ High current capability
■ High input impedance (voltage driven)
■ Low gate charge
■ Ideal for soft switching application
Application
■ Induction heating
Description
Using the latest high voltage technology based on
its patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, with
outstanding performances. The suffix “H”
identifies a family optimized for high frequency
application in order to achieve very high switching
performances (reduced tfall) maintaining a low
voltage drop.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STGW30NC120HD
GW30NC120HD
Package
TO-247
Packaging
Tube
October 2007
Rev 9
1/13
www.st.com
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Contents
Contents
STGW30NC120HD
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
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STGW30NC120HD
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VCES Collector-emitter voltage (VGS = 0)
IC (1) Collector current (continuous) at 25°C
IC (1) Collector current (continuous) at 100°C
ICL (2) Collector current (pulsed)
VGE Gate-emitter voltage
PTOT Total dissipation at TC = 25°C
If Diode RMS forward current at TC = 25°C
Tj Operating junction temperature
1. Calculated according to the iterative formula:
IC(TC)
=
----------------------------------T----J---M------A----X------–----T----C-------------------------------------
RTHJ – C × VCESAT(MAX)(TC, IC)
2. Vclamp=80% of BVces, Tj=150°C, RG=10Ω, VGE=15V
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-ambient (diode)
Rthj-amb Thermal resistance junction-ambient (IGBT)
Electrical ratings
Value
1200
60
30
135
±25
220
30
–55 to 150
Unit
V
A
A
A
V
W
A
°C
Value
0.57
1.6
30
Unit
°C/W
°C/W
°C/W
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