K2938

2SK2938(L),2SK2938(S) Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS =0.026 Ω typ. High speed switching 4V gate drive device can be driven from 5V source Outline ADE-208-561B (Z) 3rd. Edition Jun 1998 LDPAK D 44 G S 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2938(L),2SK2938(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR I Note3 AP E Note3 AR Pch Note2 Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω Ratings 60 ±20 25 100 25 20 34 50 150 –55 to +150 Unit V V A A A A mJ W °C °C 2 2SK2938(L),2SK2938(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown volt...