2SK2938
2SK2938(L),2SK2938(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =0.026 Ω ty...
Description
2SK2938(L),2SK2938(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS =0.026 Ω typ.
High speed switching 4V gate drive device can be driven from 5V source
Outline
ADE-208-561B (Z) 3rd. Edition Jun 1998
LDPAK
D
44
G S
1 2 3
1 2 3
1. Gate 2. Drain 3. Source 4. Drain
2SK2938(L),2SK2938(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation
VDSS VGSS ID I Note1
D(pulse)
I DR I Note3
AP
E Note3 AR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω
Ratings 60 ±20 25 100 25 20 34 50 150 –55 to +150
Unit V V A A A A mJ W °C °C
2
2SK2938(L),2SK2938(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown volt...
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