CJ5903DC

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3*2-8L-B Plastic-Encapsulate MOSFETS CJ5903DC V(BR)DSS -20V Dual P-Channel MOSFET RDS(on)MAX 70 mΩ@-4.5V 90 mΩ@-2.5V 120 mΩ@-1.8V   ID -4.5A  DFNWB3*2-8L-B D1 D2 FEATURE  Surface Mount Package  TrenchFET Power MOSFET MARKING APPLICATION  Load Swith,PA Switch and Battery Switch for Portable  Devices and Game Consoles Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) * Repetitive rating : Pulse width limited by junction temperature. Symbol VDS VGS ID IDM * RθJA Tj Tstg TL www.cj-elec.com 1 Value -20 ±10 -4.5 -18 113.6 150 -55~+150 260 Unit V V A A ℃/W ℃ ℃ ℃ A-2,May,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless oth...