CJ7203KDW

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Power Management MOSFETs-Schottky CJ7203KDW N-channel MOSFET and Schottky Barrier Diode V(BR)DSS/VR RDS(on)MAX ID/IO 5Ω@10V 60V 340mA  5.3Ω@5V 40V / 350mA   SOT-363 FEATURE APPLICATION z High density cell design for Low RDS（on） z Load Switch for Portable Devices z High saturation current capability z DC/DC Converter z Low Forward Voltage Drop z Guard Ring Construction for Transient Protection z Negligible Reverse Recovery Time z Low Capacitance MARKING Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1-MOSFET VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM* Pulse Drain Current Schottky Barrier Diode VRRM Peak Repetitive Reverse Voltage VR DC Blocking Voltage IO Average Rectified Forward Current Power Dissipation, Temperature and Thermal Resistance PD Power Dissipation R...