CJCD2007

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS CJCD2007 V(BR)DSS 20V Dual N-Channel MOSFET RDS(on)MAX 20 mΩ@10V  22 mΩ@4.5V 24mΩ@3.8V 26 mΩ@2.5V 35mΩ@1.8V ID 7A    DFNWB2×3-6L-C DESCRIPTION The CJCD2007 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. MARKING: Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) *Repetitive rating：Pluse width limited by junction temperature. www.cj-elec.com 1 Symbol VDS VGS ID IDM * RθJA Tj Tstg TL Value 20 ±12 7 30 125 150 -55~+150 2...