CJL2623

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETs CJL2623 Dual P-Channel MOSFET V(BR)DSS -30 V RDS(on)MAX  130mΩ@-10V  180mΩ@-4.5V ID -3 A SOT-23-6L FEATURE z TrenchFET Power MOSFET z Low Gate Charge z Low On-resistance z Surface Mount Package MARKING: 6 APPLICATION z DC/DC converter z Load switch for portable devices z Commercial-industrial applications Equivalent Circuit   1 ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current (note 1) IDM Power Dissipation (note 2) PD Thermal Resistance from Junction to Ambient RθJA Junction Temperature TJ Storage Temperature TSTG Notes : 1. Pulse width limited by Max.junction temperature. 2.Per element must not be exceeded Value -30 ±20 -3 -20 0.35 357 150 -55~ 150 Unit V V A A W ℃/W ℃ ℃ www.cj-elec.com 1 C,May,2015 MOSFET ELECTRICAL CHARACTERIS...