P-channel and N-channel Complementary MOSFETS
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL6602 P-channel and N-channe...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL6602 P-channel and N-channel Complementary MOSFETS
P-channel
V(BR)DSS
-30V
RDS(on)MAX
135 mΩ@-10V 185mΩ@-4.5V 265mΩ@-2.5V
ID
-2.3A
N-channel
V(BR)DSS
30V
RDS(on)MAX
60mΩ@10V 75mΩ@4.5V 115mΩ@2.5V
ID
3.4A
SOT-23-6L
GENERAL DESCRIPTION The CJL6602 uses advanced trench technology to provide excellent RDS(on)
and low gate charge. The complementary MOSFETS form a high-speed
power inverter and suitable for a multitude of applications.
MARKING
Equivalent Circuit
L6602
Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter Drain-Source Voltage
Symbol VDS
N-channel 30
Value
P-channel -30
Unit V
Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current (2)
VGS ±12 ID 3.4 IDM 30
±12 -2.3 -30
V A A
Power Dissipation
PD 0.35
0.35 W
Thermal Resistance from Junction to Ambient(1)
RθJA
357
357 ℃/W
Junction Temperature
TJ 150
150 ℃
Storage Temp...
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