N-Channel MOSFET. CJL8205 Datasheet

CJL8205 MOSFET. Datasheet pdf. Equivalent


JCET CJL8205
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL8205 Dual N-Channel MOSFET
V(BR)DSS
19 V
RDS(on)MAX
 25mΩ@4.5V 
32mΩ@2.5V  
ID
6A
SOT-23-6L
FEATURE
z TrenchFET Power MOSFET
z Excellent RDS(on)
z Low Gate Charge
z High Power and Current Handing Capability
z Surface Mount Package
MARKING
APPLICATION
z Battery Protection
z Load Switch
z Power Management
Equivalent Circuit
G1 D1,D2 G2
65 4
1 23
S1 D1,D2 S2
ABSOLUTE MAXIMUM RATINGS (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Symbol
VDS
VGS
ID
IDM
RθJA
TJ
TSTG
TL
Value
19
±10
6
25
357
150
-55~+150
260
www.cj-elec.com
1
Unit
V
V
A
A
/W
A-2,May,2015


CJL8205 Datasheet
Recommendation CJL8205 Datasheet
Part CJL8205
Description Dual N-Channel MOSFET
Feature CJL8205; JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8205 Du.
Manufacture JCET
Datasheet
Download CJL8205 Datasheet




JCET CJL8205
026)(7(/(&75,&$/&+$5$&7(5,67,&6
Ta=25 unless otherwise specified
Parameter
Symbol
Test Condition
STATIC CHARACTERICTISCS
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS VDS =18V,VGS = 0V
Gate-body leakage current
IGSS VGS =±10V, VDS = 0V
Gate threshold voltage (note 3)
VGS(th)
VDS =VGS, ID =250µA
Drain-source on-resistance (note 3)
RDS(on)
VGS =4.5V, ID =6A
VGS =2.5V, ID =5A
Forward tranconductance (note 3)
gFS VDS =5V, ID =4.5A
Diode forward voltage (note 3)
VSD IS=1.25A, VGS = 0V
DYNAMIC CHARACTERICTISCS (note4)
Input Capacitance
Ciss
Output Capacitance
Coss VDS =8V,VGS =0V,f =1MHz
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERICTISCS (note 4)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VDD=10V,VGS=4V,
ID=1A,RGEN=10
Turn-off fall time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS =10V,VGS =4.5V,ID=4A
Gate-Drain Charge
Qgd
Notes :
1.Repetitive ratingPluse width limited by maximum junction temperature
2.Surface Mounted on FR4 boardt10 sec.
3. Pulse test : Pulse width300μs, duty cycle2%.
4. Guaranteed by design, not subject to production.
Min Typ Max Unit
19 V
1 µA
±100 nA
0.5 0.9 V
25 m
32 m
10 S
1.2 V
800 pF
155 pF
125 pF
18 ns
5 ns
43 ns
20 ns
11 nC
2.3 nC
2.5 nC
www.cj-elec.com
2
A-2,May,2015



JCET CJL8205
7\SLFDO&KDUDFWHULVWLFV
20
T =25
a
Pulsed
Output Characteristics
V =2.5V,3V,4V,5V
GS
16
V =2V
GS
12
8
V =1.5V
GS
4
0
01234
DRAIN TO SOURCE VOLTAGE V (V)
DS
5
12
V =3V
DS
Pulsed
10
8
6
Transfer Characteristics
T =25
a
T =100
a
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5
GATE TO SOURCE VOLTAGE V (V)
GS
30
T =25
a
Pulsed
20
R
DS(ON)
——
I
D
V =2.5V
GS
V =4.5V
GS
10
1234567
DRAIN CURRENT I (A)
D
R
DS(ON)
——
V
GS
300
Pulsed
250
I =6A
D
200
150
T =100
100 a
50
T =25
a
0
01234
GATE TO SOURCE VOLTAGE V (V)
GS
5
8
Pulsed
I
S
——
V
SD
1
T =100
a
0.1
T =25
a
0.01
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
SOURCE TO DRAIN VOLTAGE V (V)
SD
1.6
ZZZFMHOHFFRP
3
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
Threshold Voltage
I =250uA
D
50 75 100
JUNCTION TEMPERATURE T ()
j
125
A-2May5







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