CJL8205

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8205 Dual N-Channel MOSFET V(BR)DSS 19 V RDS(on)MAX  25mΩ@4.5V  32mΩ@2.5V   ID 6A SOT-23-6L FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package MARKING APPLICATION z Battery Protection z Load Switch z Power Management Equivalent Circuit G1 D1,D2 G2 65 4 1 23 S1 D1,D2 S2 ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (note 1) Thermal Resistance from Junction to Ambient (note 2) Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) Symbol VDS VGS ID IDM RθJA TJ TSTG TL Value 19 ±10 6 25 357 150 -55~+150 260 www.cj-elec.com 1 Unit V V A A ℃/W ℃ ℃ ℃ A-2,May,2015 026)(7(/(&75,&$/&+$5$&7(5,67,&6 Ta=25 ℃ unless other...