CJMNP517

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2X2-6L-U Plastic-Encapsulate MOSFETS CJMNP517 N Channel +P Channel MOSFET V(BR)DSS 12 V -12V RDS(on)MAX 24mΩ@10V    27mΩ@4.5V  42mΩ@ 2.5V  72mΩ@1.8V     45mΩ@-4.5V  60mΩ@-2.5V  90mΩ@-1.8V   ID 6A -4.1A DFNWB2X2-6L-U FEATURE  Surface Mount Package  Super High Density Cell Design for Extremely Low RDS(ON)  Exceptional On-resistance and Maximum DC Current Capability APPLICATION  Power Management In Note Book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch MARKING: Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter N-MOSFET Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (note 1) Pulsed Drain Current (tp=10us) Continous Source-Drain Diode Current P-MOSFET Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (note 1) Pulsed Drain Current (tp=10us) Continous Source-Drain Diode Current Tempera...