N-Channel MOSFET. CJND8804 Datasheet

CJND8804 MOSFET. Datasheet pdf. Equivalent


JCET CJND8804
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB5×2-6L-A Plastic-Encapsulate MOSFETS
CJND8804
V(BR)DSS
  20V
Dual N-Channel MOSFET
RDS(on)MAX
 13mΩ@10V
14mΩ @4.5V
15.5mΩ@3.8V
19 mΩ@2.5V
27mΩ@1.8V
ID
 
8A
 
DFNWB5×2-6L-A
DESCRIPTION
The CJND8804 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch,facilitated
by its common-drain configuration.
MARKING:
Equivalent Circuit
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient(note1)
Thermal Resistance from Junction to Ambient(note2)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive ratingPluse width limited by junction temperature.
Note1.When mounted on a minimum pad.
2.When mounted on 1 in2 of 2oz copper board.
Symbol
VDS
VGS
ID
IDM *
RθJA
Tj
Tstg
TL
www.cj-elec.com
1
Value
20
±12
8
30
175
70
150
-55~+150
260
Unit
V
V
A
A
/W
/W
D,Aug,2015


CJND8804 Datasheet
Recommendation CJND8804 Datasheet
Part CJND8804
Description Dual N-Channel MOSFET
Feature CJND8804; JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB5×2-6L-A Plastic-Encapsulate MOSFETS CJND88.
Manufacture JCET
Datasheet
Download CJND8804 Datasheet




JCET CJND8804
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 Я unless otherwise specified
Parameter
Symbol
Test Condition
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage (note 1)
Drain-source on-resistance (note 1)
Forward tranconductance (note 1)
Diode forward voltage(note 1)
DYNAMIC PARAMETERS (note 2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate charge
Gate-source charge
Gate-drain charge
SWITCHING PARAMETERS(note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
V (BR) DSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
VSD
VGS = 0V, ID =250µA
VDS =16V,VGS = 0V
VGS =±10V, VDS = 0V
VDS =VGS, ID =250µA
VGS =10V, ID =8A
VGS =4.5V, ID =5A
VGS =3.8V, ID =5A
VGS =2.5V, ID =4A
VGS =1.8V, ID =3A
VDS =5V, ID =8A
IS=1A, VGS = 0V
Ciss
Coss
Crss
Qg
Qgs
Qgd
VDS =10V,VGS =0V,f =1MHz
VDS =10V,VGS =4.5V,ID =8A
td(on)
tr
td(off)
tf
VGS=10V,VDD=10V,
RL=1.2,RGEN=3
Notes :
1. Pulse Test : Pulse width300µs, duty cycle0.5%.
2. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
20
0.5
17
V
10 µA
±10 µA
1V
13 m
14 m
15.5 m
19 m
27 m
S
1V
1800
230
200
17.9
1.5
4.7
pF
pF
pF
nC
nC
nC
2.5 ns
7.2 ns
49 ns
10.8 ns
www.cj-elec.com
2
D,Aug,2015



JCET CJND8804
7\SLFDO&KDUDFWHULVWLFV
Output Characteristics
25
VGS=10V3.0V2V
Pulsed
20
15
10
V =1.5V
GS
5
VGS=1.2V
0
0 2 4 6 8 10
DRAIN TO SOURCE VOLTAGE VDS (V)
40
Ta=25
35 Pulsed
30
25
20
15
10
5
0
12
R ——
DS(ON)
I
D
VGS=1.8V
VGS=2.5V
VGS=10V
34567
DRAIN CURRENT ID (A)
10
Ta=25
Pulsed
1
I ——
S
V
SD
8
0.1
Ta=100
0.01
Ta=25
1E-3
1E-4
0.0
0.2 0.4 0.6 0.8 1.0
SOURCE TO DRAIN VOLTAGE VSD (V)
1.2
10
VDS=16V
Pulsed
8
Transfer Characteristics
6
4
Ta=100
2 Ta=25
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
GATE TO SOURCE VOLTAGE VGS (V)
R —— V
DS(ON)
GS
100
Ta=25
Pulsed
ID=8A
80
60
40
Ta=100
20
Ta=25
0
0 2 4 6 8 10 12
GATE TO SOURCE VOLTAGE VGS (V)
750
700
650
600
550
500
450
400
350
25
Threshold Voltage
ID=250uA
50 75 100
JUNCTION TEMPERATURE TJ ()
125
www.cj-elec.com
3
D,Aug,2015







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)