CJND8804

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB5×2-6L-A Plastic-Encapsulate MOSFETS CJND8804 V(BR)DSS   20V Dual N-Channel MOSFET RDS(on)MAX  13mΩ@10V 14mΩ @4.5V 15.5mΩ@3.8V 19 mΩ@2.5V 27mΩ@1.8V ID   8A   DFNWB5×2-6L-A DESCRIPTION The CJND8804 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. MARKING: Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient(note1) Thermal Resistance from Junction to Ambient(note2) Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) *Repetitive rating：Pluse width limited by junction temperature. Note：1.When mounted on a minimum pad...