CJS6562

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TSSOP-8 Plastic-Encapsulate Transistors CJS6562 P-channel V(BR)DSS -20V N- and P-Channel 12-V(G-S) MOSFET RDS(on)MAX 50 mΩ@-4.5V 90mΩ@-2.5V ID -3.5A  TSSOP8 N-channel V(BR)DSS 20V RDS(on)MAX 30mΩ@ 4.5V 40mΩ@2.5V ID 4.5A  MARKING Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃)a Ta=25℃ Ta=70℃ Pulsed Drain Current Continuous Source Current(Diode Conduction)a Power Dissipation a Maximum Junction-to-Ambienta Ta=25℃ Ta=70℃ Operating Junction and Storage Temperature Notes : a. Surface Mounted on FR4 board, t≤10S Symbol VDS VGS ID IDM IS PD RthJA TJ, Tstg N-Channel 20 ±12 4.5 3.6 30 1.25 P-Channel -20 ±12 -3.5 -2.7 -30 -1.25 1.0 0.64 125 -55 ~150 Unit V A W ℃/W ℃ www.cj-elec.com 1 E,May,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Static Parameter Gate...