CJS8810

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD CJS8810 V(BR)DSS 20V   TSSOP8 Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET RDS(on)MAX  20mΩ@10V 22mΩ @4.5V 24 mΩ@3.8V 26mΩ@2.5V 35mΩ@1.8V ID   7A   TSSOP8 DESCRIPTION The CJS8810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. MARKING: Equivalent Circuit S8810 YY S8810= Device code , YY=Date Code Solid dot=Pin1 indicator Solid dot = Green molding compound device, if none,the normal device. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) *Repetitive rating：Pluse width limited b...