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CJS8820

JCET

Dual N-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD CJS8820 V(BR)DSS   20V TSSOP8 Plastic-Encapsulate MOSFETS Dual N-C...


JCET

CJS8820

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Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD CJS8820 V(BR)DSS   20V TSSOP8 Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET RDS(on)MAX  21mΩ@10V 24mΩ @4.5V 28mΩ@3.8V 32mΩ@2.5V 50mΩ@1.8V ID   7A   TSSOP8 DESCRIPTION The CJS8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. MARKING: Equivalent Circuit S8820= Device code YY=Date Code Solid dot = Pin1 indicator Solid dot = Green molding compound device, if none,the normal device. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) *Repetitive rating:Pluse width limited by junction...




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