Dual N-Channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
CJS8820
V(BR)DSS
20V
TSSOP8 Plastic-Encapsulate MOSFETS
Dual N-C...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
CJS8820
V(BR)DSS
20V
TSSOP8 Plastic-Encapsulate MOSFETS
Dual N-Channel MOSFET
RDS(on)MAX
21mΩ@10V 24mΩ @4.5V 28mΩ@3.8V 32mΩ@2.5V 50mΩ@1.8V
ID
7A
TSSOP8
DESCRIPTION The CJS8820 uses advanced trench technology to provide excellent
RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its
common-drain configuration.
MARKING:
Equivalent Circuit
S8820= Device code YY=Date Code Solid dot = Pin1 indicator Solid dot = Green molding compound device, if none,the normal device.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating:Pluse width limited by junction...
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