CJX3134K

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate MOSFETS CJX3134K V(BR)DSS 20 V Dual N-Channel MOSFET RDS(on)MAX   380mΩ@ 4.5V  450mΩ@ 2.5V  800mΩ@1.8V   ID 0.75A SOT-563 FEATURE  Surface Mount Package  N-Channel Switch with Low RDS(on)  Operated at Low Logic Level Gate Drive  Equivalent to Two CJ3134K. APPLICATION  Load/Power Switching  Interfacing Switching  Battery Management for Ultra Small Portable Electronics  Logic Level Shift MARKING Equivalent Circuit D1 G2 65 S2 4 12 S1 G1 3 D2 ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-source voltage Typical Gate-source voltage Continuous drain current (t ≤10s) Power dissipation(note1) Thermal resistance from junction to ambient Junction temperature Storage temperature Symbol VDS VGS ID PD RθJA TJ Tstg Value 20 ±12 0.75 0.15 833 150 -55~ +150 Unit V V A W ℃/W ℃ ℃ www.cj-elec.com 1 F,Aug,2015 MOSFET ELECTRICAL CHARACTER...