CJX3139K

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-63 Plastic-Encapsulate MOSFETS CJ;3139K Dual P-Channel Power MOSFET V(BR)DSS -20V RDS(on)MAX   520mΩ@-4.5V  700mΩ@-2.5V  950mΩ(TYP)@-1.8V   ID -0.66A SOT-563 GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). Including two P-ch CJ3139K MOSFET (independently) in a package. FEATURE z High-Side Switching z Low On-Resistance z Low Threshold z Fast Switching Speed APPLICATION z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching Cell Phones, Pagers MARKING Equivalent Circuit D1 G2 S2 654 1 23 S1 G1 D2 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source voltage Typical Gate-Source Voltage Drain Current-Continuous Drain Current -Pulsed(note1) Power Dissipation (note 2) Thermal Resistance from Junction to Ambient Storage Temperatur...