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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate MOSFETS
CJX3439K N Channel +P Channel MOSFET
V(BR)DSS
20 V
-20V
RDS(on)MAX
380mΩ@ 4.5V 450mΩ@ 2.5V
800mΩ@1.8V 520mΩ@-4.5V
700mΩ@-2.5V
950mΩ(TYP)@-1.8V
ID
0.75A
-0.66A
SOT-563
FEATURE z Surface Mount Package z Low RDS(on) z Operated at Low Logic Level Gate Drive z ESD Protected Gate z Including a N-ch CJ3134K and a P-ch CJ3139K
(independently) In a Package
MARKING
APPLICATION z Load/ Power Switching z Interfacing Switching z Battery Management for Ultra Small Portable Electronics z Logic Level Shift
Equivalent Circuit
D1 G2 S2 6 54
12 3 S1 G1 D2
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter N-MOSFET Drain-Source Voltage Typical Gate-Source Voltage Continuous Drain Current (note 1) Pulsed Drain Current (tp=10us)
P-MOSFET Drain-Source Voltage Typical Gate-Source Voltage Continuous Drain Current (note 1) Pulsed Drain Current (tp=10us)
Temperature and .