P-Channel MOSFET. CJX3439K Datasheet

CJX3439K MOSFET. Datasheet pdf. Equivalent


JCET CJX3439K
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate MOSFETS
CJX3439K N Channel +P Channel MOSFET
V(BR)DSS
20 V
-20V
RDS(on)MAX
  380mΩ@ 4.5V 
450mΩ@ 2.5V 
800mΩ@1.8V  
  520mΩ@-4.5V 
700mΩ@-2.5V 
950mΩ(TYP)@-1.8V
  
ID
0.75A
-0.66A
SOT-563
FEATURE
z Surface Mount Package
z Low RDS(on)
z Operated at Low Logic Level Gate Drive
z ESD Protected Gate
z Including a N-ch CJ3134K and a P-ch CJ3139K
(independently) In a Package
MARKING
APPLICATION
z Load/ Power Switching
z Interfacing Switching
z Battery Management for Ultra Small Portable Electronics
z Logic Level Shift
Equivalent Circuit
D1 G2 S2
6 54
12 3
S1 G1 D2
ABSOLUTE MAXIMUM RATINGS (Ta=25unless otherwise noted)
Parameter
N-MOSFET
Drain-Source Voltage
Typical Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
P-MOSFET
Drain-Source Voltage
Typical Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Temperature and Thermal Resistance
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Symbol
VDS
VGS
ID
IDM
VDS
VGS
ID
IDM
RθJA
TJ
TSTG
TL
www.cj-elec.com
1
Value
20
±12
0.75
1.8
-20
±12
-0.66
-1.2
833
150
-55~+150
260
Unit
V
V
A
A
V
V
A
A
/W
C,Jun,2015


CJX3439K Datasheet
Recommendation CJX3439K Datasheet
Part CJX3439K
Description N-Channel + P-Channel MOSFET
Feature CJX3439K; JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate MOSFETS CJX3439K N C.
Manufacture JCET
Datasheet
Download CJX3439K Datasheet




JCET CJX3439K
MOSFET ELECTRICAL CHARACTERISTICS
N-ch MOSFET ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise noted)
Parameter
STATIC CHARACTERISTICS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage (note 2)
Drain-source on-resistance(note 2)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Forward tranconductance(note 2)
gFS
Diode forward voltage
VSD
DYNAMIC CHARACTERISTICS (note 4)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERISTICS (note 3,4)
Turn-on delay time
td(on)
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
tf
Test Condition
VGS = 0V, ID =250µA
VDS =20V,VGS = 0V
VGS =±10V, VDS = 0V
VDS =VGS, ID =250µA
VGS =4.5V, ID =0.65A
VGS =2.5V, ID =0.55A
VGS =1.8V, ID =0.45A
VDS =10V, ID =0.8A
IS=0.15A, VGS = 0V
VDS =16V,VGS =0V,f =1MHz
VGS=4.5V,VDS=10V,
ID=500mA,RGEN=10
Min Typ
20
0.35
1.6
79
13
9
6.7
4.8
17.3
7.4
P-ch MOSFET ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise noted)
Parameter
STATIC CHARACTERISTICS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage (note 2)
Drain-source on-resistance(note 2)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Forward tranconductance(note 2)
gFS
Diode forward voltage
VSD
DYNAMIC CHARACTERISTICS (note 4)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERISTICS (note 3,4)
Turn-on delay time
td(on)
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
tf
Test Condition
VGS = 0V, ID =-250µA
VDS =-20V,VGS = 0V
VGS =±10V, VDS = 0V
VDS =VGS, ID =-250µA
VGS =-4.5V, ID =-1A
VGS =-2.5V, ID =-0.8A
VGS =-1.8V, ID =-0.5A
VDS =-10V, ID =-0.54A
IS=-0.5A, VGS = 0V
VDS =-16V,VGS =0V,f =1MHz
VGS=-4.5V,VDS=-10V,
ID=-200mA,RGEN=10
Notes :
1.Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse Test : Pulse width=300μs, duty cycle2%.
3. Switching characteristics are independent of operating junction temperature.
4. Graranted by designnot subject to producting.
Min Typ
-20
-0.35
950
1.2
113
15
9
9
5.8
32.7
20.3
Max Unit
1
±20
1.1
380
450
800
1.2
V
µA
uA
V
m
m
m
S
V
120 pF
20 pF
15 pF
ns
ns
ns
ns
Max Unit
V
-1 µA
±20 uA
-1.1 V
520 m
700 m
m
S
-1.2 V
170 pF
25 pF
15 pF
ns
ns
ns
ns
www.cj-elec.com
2
C,Jun,2015



JCET CJX3439K
7\SLFDO&KDUDFWHULVWLFV
N-Channel MOS
5.0
4.5 Ta=25
Pulsed
4.0
3.5
Output Characteristics
VGS=4V,5V
VGS=3V
VGS=2.5V
3.0
2.5 VGS=2V
2.0
1.5
1.0 VGS=1.5V
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
DRAIN TO SOURCE VOLTAGE VDS (V)
4.0
VDS=3V
3.5 Pulsed
Transfer Characteristics
3.0
2.5
Ta=25
Ta=100
2.0
1.5
1.0
0.5
0.0
0123
GATE TO SOURCE VOLTAGE VGS (V)
4
500
Ta=25
Pulsed
450
400
RDS(ON) —— ID
VGS=1.8V
350
VGS=2.5V
300
VGS=4.5V
250
200
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
DRAIN CURRENT ID (A)
800
700
600
500
400
300
200
100
1
RDS(ON) —— VGS
ID=0.65A
Pulsed
Ta=100
Ta=25
234
GATE TO SOURCE VOLTAGE VGS (V)
5
2
Pulsed
1
IS —— VSD
0.1 Ta=100Ta=25
0.01
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
SOURCE TO DRAIN VOLTAGE VSD (V)
1.6
ZZZFMHOHFFRP
3
0.8
0.7
0.6
0.5
0.4
0.3
0.2
25
Threshold Voltage
ID=250uA
50 75 100
JUNCTION TEMPERATURE Tj ()
125
C,Jun,2015







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