Digital Transistors. DTA115EE Datasheet

DTA115EE Transistors. Datasheet pdf. Equivalent


ON Semiconductor DTA115EE
MUN2136, MMUN2136L,
MUN5136, DTA115EE,
DTA115EM3
Digital Transistors (BRT)
R1 = 100 kW, R2 = 100 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
CollectorBase Voltage
CollectorEmitter Voltage
VCBO
VCEO
50
50
Vdc
Vdc
Collector Current Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
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PIN CONNECTIONS
PIN 3
COLLECTOR
PIN 1
BASE
R1
(OUTPUT)
(INPUT) R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
XX MG
G
1
SC59
CASE 318D
STYLE 1
XXX MG
G
1
SOT23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
SC70/SOT323
CASE 419
STYLE 3
SC75
CASE 463
STYLE 1
XX M
1
SOT723
CASE 631AA
STYLE 1
XXX
M
G
= Specific Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
October, 2016 Rev. 4
1
Publication Order Number:
DTA115E/D


DTA115EE Datasheet
Recommendation DTA115EE Datasheet
Part DTA115EE
Description Digital Transistors
Feature DTA115EE; MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 Digital Transistors (BRT) R1 = 100 kW, R2 = 100 kW.
Manufacture ON Semiconductor
Datasheet
Download DTA115EE Datasheet




ON Semiconductor DTA115EE
MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3
Table 1. ORDERING INFORMATION
Device
Part Marking
Package
Shipping
MUN2136T1G
6N
SC59
3000 / Tape & Reel
(PbFree)
MMUN2136LT1G
ACG
SOT23
(PbFree)
3000 / Tape & Reel
MUN5136T1G
6N
SC70/SOT323
3000 / Tape & Reel
(PbFree)
DTA115EET1G, NSVDTA115EET1G*
6N
SC75
3000 / Tape & Reel
(PbFree)
DTA115EM3T5G
6N
SOT723
8000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
300
250
200
(1) (2) (3) (4)
150
(1) SC75 and SC70/SOT323; Minimum Pad
(2) SC59; Minimum Pad
(3) SOT23; Minimum Pad
(4) SOT723; Minimum Pad
100
50
0
50 25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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ON Semiconductor DTA115EE
MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SC59) (MUN2136)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT23) (MMUN2136L)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC70/SOT323) (MUN5136)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC75) (DTA115EE)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT723) (DTA115EM3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 x 1.0 Inch Pad.
Symbol
Max
Unit
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
TJ, Tstg
PD
RqJA
TJ, Tstg
230
338
1.8
2.7
540
370
264
287
55 to +150
mW
mW/°C
°C/W
°C/W
°C
246
400
2.0
3.2
508
311
174
208
55 to +150
mW
mW/°C
°C/W
°C/W
°C
202
310
1.6
2.5
618
403
280
332
55 to +150
mW
mW/°C
°C/W
°C/W
°C
200
300
1.6
2.4
600
400
55 to +150
mW
mW/°C
°C/W
°C
260
600
2.0
4.8
480
205
55 to +150
mW
mW/°C
°C/W
°C
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