Resistor Transistors. MUN5312DW1 Datasheet

MUN5312DW1 Transistors. Datasheet pdf. Equivalent


ON Semiconductor MUN5312DW1
MUN5312DW1,
NSBC124EPDXV6,
NSBC124EPDP6
Complementary Bias
Resistor Transistors
R1 = 22 kW, R2 = 22 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping
MUN5312DW1T1G,
SMUN5312DW1T1G*
SOT−363
3,000 / Tape & Reel
NSVMUN5312DW1T3G*
MUN5312DW1T2G,
NSVMUN5312DW1T2G*
SOT−363
SOT−363
10,000 / Tape & Reel
3,000 / Tape & Reel
NSBC124EPDXV6T1G
SOT−563
4,000 / Tape & Reel
NSBC124EPDXV6T5G
SOT−563
8,000 / Tape & Reel
NSBC124EPDP6T5G
SOT−963
8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
June, 2015 − Rev. 3
1
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PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
SOT−363
CASE 419B
6
12 M G
G
1
SOT−563
CASE 463A
12 M G
G
1
SOT−963
CASE 527AD
MG
G
1
12/R
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
Publication Order Number:
DTC124EP/D


MUN5312DW1 Datasheet
Recommendation MUN5312DW1 Datasheet
Part MUN5312DW1
Description Complementary Bias Resistor Transistors
Feature MUN5312DW1; MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6 Complementary Bias Resistor Transistors R1 = 22 kW, R2 = 22.
Manufacture ON Semiconductor
Datasheet
Download MUN5312DW1 Datasheet




ON Semiconductor MUN5312DW1
MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5312DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 2)
(Note 1)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
MUN5312DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 2)
(Note 1)
PD
Thermal Resistance,
Junction to Ambient
(Note 2)
(Note 1)
RqJA
Thermal Resistance,
Junction to Lead (Note 1)
(Note 2)
RqJL
Junction and Storage Temperature Range
NSBC124EPDXV6 (SOT−563) ONE JUNCTION HEATED
TJ, Tstg
Total Device Dissipation
TA = 25°C
(Note 1)
Derate above 25°C
(Note 1)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
NSBC124EPDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C
(Note 1)
Derate above 25°C
(Note 1)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
Junction and Storage Temperature Range
NSBC124EPDP6 (SOT−963) ONE JUNCTION HEATED
TJ, Tstg
Total Device Dissipation
TA = 25°C
(Note 4)
(Note 5)
Derate above 25°C
(Note 5)
(Note 4)
PD
Thermal Resistance,
Junction to Ambient
(Note 5)
(Note 4)
RqJA
NSBC124EPDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C
(Note 4)
(Note 5)
Derate above 25°C
(Note 5)
(Note 4)
PD
Thermal Resistance,
Junction to Ambient
(Note 5)
(Note 4)
RqJA
Junction and Storage Temperature Range
TJ, Tstg
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 × 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
4. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
5. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Max
187
256
1.5
2.0
670
490
250
385
2.0
3.0
493
325
188
208
−55 to +150
357
2.9
350
500
4.0
250
−55 to +150
231
269
1.9
2.2
540
464
339
408
2.7
3.3
369
306
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C/W
°C
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
MW
mW/°C
°C/W
MW
mW/°C
°C/W
°C
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ON Semiconductor MUN5312DW1
MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6
ELECTRICAL CHARACTERISTICS (TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
nAdc
− 100
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
nAdc
− 500
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
mAdc
− 0.2
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage (Note 6)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 6)
(IC = 5.0 mA, VCE = 10 V)
hFE
60 100
Collector-Emitter Saturation Voltage (Note 6)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
V
− 0.25
Input Voltage (Off)
(VCE = 5.0 V, IC = 100 mA) (NPN)
(VCE = 5.0 V, IC = 100 mA) (PNP)
Input Voltage (On)
(VCE = 0.2 V, IC = 5.0 mA) (NPN)
(VCE = 0.2 V, IC = 5.0 mA) (PNP)
Vi(off)
Vdc
− 1.2 −
− 1.2 −
Vi(on)
Vdc
− 1.9 −
− 2.0 −
Output Voltage (On)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
Vdc
− 0.2
Output Voltage (Off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
Vdc
Input Resistor
R1 15.4 22 28.6 kW
Resistor Ratio
R1/R2
0.8
1.0
1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle 2%.
400
350
300
250
200
(1) (2) (3)
150
(1) SOT−363; 1.0 × 1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm2, 1 oz. Copper Trace
100
50
0
−50 −25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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