RF Transistor. NSVF3007SG3 Datasheet

NSVF3007SG3 Transistor. Datasheet pdf. Equivalent


ON Semiconductor NSVF3007SG3
NSVF3007SG3
Advance Information
RF Transistor
for Low Noise Amplifier
This RF transistor is designed for low noise amplifier applications. MCPH
package is suitable for use under high temperature environment because it
has superior heat radiation characteristics. This RF transistor is AEC-Q101
qualified and PPAP capable for automotive applications.
Features
Low-noise use
: NF = 1.2 dB typ. (f = 1 GHz)
High cut-off frequency : fT = 8 GHz typ. (VCE = 5 V)
High gain
: |S21e|2 = 12 dB typ. (f = 1 GHz)
AEC-Q101 qualified and PPAP capable
MCPH3 package is pin-compatible with SC-70FL
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Low Noise Amplifier for FM Radio
Low Noise Amplifier for RKE
RF Amplifier for ADAS
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Collector to Base Voltage
VCBO
20 V
Collector to Emitter Voltage
VCEO
12 V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC 30 mA
Collector Dissipation
PC 350 mW
Operating Junction and
Storage Temperature
Tj, Tstg
55 to +150 C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
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12 V, 30 mA
fT = 8 GHz typ.
RF Transistor
ELECTRICAL CONNECTION
NPN
3
1
1 : Base
2 : Emitter
2 3 : Collector
MARKING
3
1
2
MCPH3
ORDERING INFORMATION
See detailed ordering and shipping
information on page 10 of this data sheet.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2016
December 2016 - Rev. P0
1
Publication Order Number :
NSVF3007SG3/D


NSVF3007SG3 Datasheet
Recommendation NSVF3007SG3 Datasheet
Part NSVF3007SG3
Description RF Transistor
Feature NSVF3007SG3; NSVF3007SG3 Advance Information RF Transistor for Low Noise Amplifier This RF transistor is designe.
Manufacture ON Semiconductor
Datasheet
Download NSVF3007SG3 Datasheet




ON Semiconductor NSVF3007SG3
NSVF3007SG3
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2)
Parameter
Symbol
Conditions
Value
Unit
min typ max
Collector Cutoff Current
ICBO
VCB = 5 V, IE = 0 A
1.0 A
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0 A
1.0 A
DC Current Gain
hFE VCE = 5 V, IC = 5 mA
60 150
Gain-Bandwidth Product
Forward Transfer Gain
fT
| S21e |2
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 10 mA, f = 1 GHz
68
9 12
GHz
dB
Noise Figure
NF VCE = 5 V, IC = 10 mA, f = 1 GHz
1.2 1.8 dB
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Note 3 : Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
IC -- VCE
30 450μA
400μA
350μA
25 300μA
250μA
20
200μA
15 150μA
10 100μA
30
VCE=5V
25
20
15
10
IC -- VBE
5
0
0
1000
7
5
3
2
100
7
5
3
2
50μA
IB=0μA
2 4 6 8 10 12
Collector-to-Emitter Voltage, VCE -- V
hFE -- IC
VCE=5V
5
0
0 0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE -- V
Cob -- VCB
10
f=1MHz
7
5
3
2
1.0
7
5
3
2
10
0.1
1.0
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Collector Current, IC -- mA
Cre -- VCB
f=1MHz
7
5
0.1
0.1
100
7
5
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Collector-to-Base Voltage, VCB -- V
fT -- IC
VCE=5V
f=1GHz
3
2
10
3
7
5
2
3
2
0.1
0.1
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Collector-to-Base Voltage, VCB -- V
1.0
1.0
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2
23
5 7 10
23
Collector Current, IC -- mA
5 7 100



ON Semiconductor NSVF3007SG3
25
20
15
10
5
0
1.0
400
NSVF3007SG3
|S21e|2 -- IC
VCE=5V
f=1GHz
23
5 7 10
23
Collector Current, IC -- mA
PC -- Ta
5 7 100
10
9
8
7
6
5
4
3
2
1
0
1.0
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
NF -- IC
VCE=5V
f=1GHz
Zs=50Ω
Zs=Zsopt
23
5 7 10
23
5 7 100
Collector Current, IC -- mA
S Parameters (Common emitter)
VCE=3V, IC=5mA, ZO=50Ω
Freq(MHz) S11
S11
100
0.889
-11.8
200
0.872
-18.1
300
0.802
-32.2
400
0.784
-37.9
500
0.687
-55.5
600
0.651
-64.3
700
0.591
-76.2
800
0.535
-85.9
900
0.498
266.2
1000
0.450
258.0
1200
0.389
244.7
1400
0.352
234.1
1600
0.322
224.9
1800
0.300
216.6
2000
0.282
208.5
2200
0.266
200.9
2400
0.258
193.5
2600
0.246
186.5
2800
0.243
180.9
3000
0.250
174.2
S21
9.020
8.560
8.281
7.883
7.588
7.221
6.686
6.254
5.783
5.404
4.684
4.101
3.651
3.291
3.004
2.776
2.586
2.415
2.292
2.191
S21
164.0
151.7
142.9
136.4
125.7
119.3
111.7
105.1
100.0
94.8
86.9
80.8
75.6
70.9
66.6
62.6
58.5
55.0
51.7
47.7
S12
0.011
0.026
0.037
0.046
0.057
0.065
0.073
0.080
0.086
0.093
0.105
0.118
0.131
0.146
0.161
0.177
0.194
0.211
0.231
0.252
S12
87.1
81.8
77.5
74.5
71.6
70.4
69.0
68.2
67.7
67.9
68.1
68.7
69.4
70.1
70.5
70.7
70.6
70.5
70.4
69.3
S22
0.978
0.945
0.892
0.843
0.771
0.724
0.675
0.632
0.598
0.562
0.514
0.482
0.463
0.447
0.437
0.435
0.433
0.428
0.435
0.450
S22
-9.1
-17.9
-25.3
-32.1
-39.3
-43.5
-48.4
-52.3
-55.7
-58.4
-63.0
-66.0
-68.3
-70.1
-71.9
-73.7
-76.6
-78.6
-80.0
-83.4
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