NSVF6003SB6

NSVF6003SB6 Advance Information RF Transistor 12 V, 150 mA, fT = 7 GHz, NPN Single This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. Features  High Gain (fT = 7 GHz typ)  High Current (IC = 150 mA)  Miniature and Thin 6 pin Package  Large Collector Dissipation (800 mW)  AEC-Q101 qualified and PPAP capable  Pb-Free, Halogen Free and RoHS compliance Typical Applications  Low Noise Amplifier for FM Radio  Low Noise Amplifier for TV  SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Symbol Value Collector to Base Voltage VCBO 20 Collector to Emitter Voltage VCEO 12 Emitter to Base Voltage VEBO 2 Collector Current IC 150 Collector Dissipation (Note 2) Operating Junction and Storage Temperature PC T...