NSVF6003SB6
Advance Information RF Transistor 12 V, 150 mA, fT = 7 GHz, NPN Single
This RF transistor is designed for l...
NSVF6003SB6
Advance Information RF
Transistor 12 V, 150 mA, fT = 7 GHz,
NPN Single
This RF
transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF
transistor is AEC-Q101 qualified and PPAP capable for automotive applications.
Features High Gain (fT = 7 GHz typ) High Current (IC = 150 mA) Miniature and Thin 6 pin Package Large Collector Dissipation (800 mW) AEC-Q101 qualified and PPAP capable Pb-Free, Halogen Free and RoHS compliance
Typical Applications Low Noise Amplifier for FM Radio Low Noise Amplifier for TV
SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage
VCEO
12
Emitter to Base Voltage
VEBO
2
Collector Current
IC 150
Collector Dissipation (Note 2) Operating Junction and Storage Temperature
PC T...